Gap generation in ABC-stacked multilayer graphene: screening vs band flattening

Abstract

We calculate the dynamical polarization function and solve a self-consistent gap equation in the random phase approximation in undoped ABC-stacked n-layer graphene. We find that the gap is maximal in trilayer graphene and decreases monotonously for $n\ge 4$ because the effects of screening in the gap equation win over those connected with the flattening of electron bands as n increases.

9 pages, 4 figures; comments added; typos corrected; references revised; to match the published version

References in corpus (12)

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Cited by in corpus (11)

• Correlated Insulator and Chern Insulators in Pentalayer Rhombohedral Stacked Graphene
• Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)
• Spontaneous Chiral Symmetry Breaking in Bilayer Graphene
• Exchange interaction, disorder, and stacking faults in rhombohedral graphene multilayers
• Field-effect-driven half-metallic multilayer graphene
• Thermodynamic properties of the electron gas in multilayer graphene in the presence of a perpendicular magnetic field
• Reduced QED with few planes and fermion gap generation
• Quasiparticle renormalization in ABC graphene trilayers
• Films of rhombohedral graphite as two-dimensional topological semimetals
• Dynamical polarization in ABC-stacked multilayer graphene in a magnetic field
• Correlated interlayer quantum Hall state in large-angle twisted trilayer graphene