Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)
arXiv:1702.03045 · doi:10.1063/1.4938466
Abstract
The growth, atomic structure, and electronic property of trilayer graphene (TLG) on Ru(0001) were studied by low temperature scanning tunneling microscopy and spectroscopy in combined with tight-binding approximation (TBA) calculations. TLG on Ru(0001) shows a flat surface with a hexagonal lattice due to the screening effect of the bottom two layers and the AB-stacking in the top two layers. The coexistence of AA- and AB-stacking in the bottom two layers leads to three different stacking orders of TLG, namely, ABA-, ABC-, and ABB-stacking. STS measurements combined with TBA calculations reveal that the density of states of TLG with ABC- and ABB-stacking is characterized by one and two sharp peaks near to the Fermi level, respectively, in contrast to the V-shaped feature of TLG with ABA-stacking. Our work demonstrates that TLG on Ru(0001) might be an ideal platform for exploring stacking-dependent electronic properties of graphene.
arXiv comment18 pages, 4 figures
References in corpus (15)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- The electronic properties of bilayer graphene
- Electronic Properties of Graphene in a Strong Magnetic Field
- The missing atom as a source of carbon magnetism
- Electronic states and Landau levels in graphene stacks
- Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene
- Chiral Decomposition in the Electronic Structure of Graphene Multilayers
- Stacking-order dependent transport properties of trilayer graphene
- Integer Quantum Hall Effect in Trilayer Graphene
- Tight-binding description of intrinsic superconducting correlations in multilayer graphene
- Ferromagnetism in ABC-trilayer graphene
- Direct Probing Stacking Order and Electronic Spectrum of Rhombohedral Trilayer Graphene with Scanning Tunneling Microscopy
- Epitaxial Growth of Large-area Bilayer Graphene on Ru(0001)
- Gap generation in ABC-stacked multilayer graphene: screening vs band flattening
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- Quantization Phenomena of critical Hamiltonians in 2D systems