Stacking-order dependent transport properties of trilayer graphene

Abstract

We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of ν= 2, 4, 6... with a step of Δν= 2, whereas the inversion symmetric ABC trilayer exhibits plateaus at ν= 6 and 10 with 4-fold spin and valley degeneracy.

4 pages, 4 figures

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Cited by in corpus (43)

• Transport studies of dual-gated ABC and ABA trilayer graphene: band gap opening and band structure tuning in very large perpendicular electric field
• Networks of ABA and ABC stacked graphene on mica observed by scanning tunneling microscopy
• Structurally Dependent Fano Resonances in the Infrared Spectra of Phonons in Few-Layer Graphene
• Interacting electrons on trilayer honeycomb lattices
• Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene
• Gapped broken symmetry states in ABC trilayer graphene
• Current-temperature scaling for a Schottky interface with non-parabolic energy dispersion
• Direct observation of a gate tunable band-gap in electrical transport in ABC-trilayer graphene
• Hund's Rules for the N=0 Landau Levels of Trilayer Graphene
• Broken Symmetry Quantum Hall States in Dual Gated ABA Trilayer Graphene
• Ferromagnetism in ABC-trilayer graphene
• Landau level splittings, phase transitions, and non-uniform charge distribution in trilayer graphene
• Electrical transport in suspended and double gated trilayer graphene
• Stacking order, interaction and weak surface magnetism in layered graphene sheets
• Proximity spin-orbit and exchange coupling in ABA and ABC trilayer graphene van der Waals heterostructures
• Tunable symmetries of integer and fractional quantum Hall phases in heterostructures with multiple Dirac bands
• Flat band electrons and interactions in rhombohedral trilayer graphene
• Stacking-dependent electronic property of trilayer graphene epitaxially grown on Ru(0001)
• Low-energy band structure and even-odd layer number effect in AB-stacked multilayer graphene
• Interaction-induced insulating state in thick multilayer graphene
• Tunable Infrared Phonon Anomalies in Trilayer Graphene
• Multiband tunneling in trilayer graphene
• Origin of layer number dependent linear and nonlinear optical properties of two-dimensional graphene-like SiC
• Fine structure of the lowest Landau level in suspended trilayer graphene
• Multilayer graphene shows intrinsic resistance peaks in the carrier density dependence
• Landau level diagram and the continuous rotational symmetry breaking in trilayer graphene
• Stacking-order dependence in thermoelectric transport of biased trilayer graphene
• Nonlinear optical responses and quantum geometry in rhombohedral trilayer graphene
• Imaging Stacking-Dependent Surface Plasmon Polaritons in Trilayer Graphene
• Tunable Excitons in Rhombohedral Trilayer Graphene
• Vacancy induced zero energy modes in graphene stacks: The case of ABC trilayer
• High-resolution Tunneling Spectroscopy of ABA-stacked Trilayer Graphene
• Intrinsic resistance peaks in AB-stacked multilayer graphene with odd number of layers
• Low energy band structure in Bernal stacked hexlayer graphene: Landau fan diagram and resistance ridge
• Stacking-induced magnetic frustration and spiral spin liquid
• Orbital Lamb shift and mixing of the pseudo-zero-mode Landau levels in ABC-stacked trilayer graphene
• Thermodynamic properties of the electron gas in multilayer graphene in the presence of a perpendicular magnetic field
• Magnetotransport study of the mini-Dirac cone in AB-stacked four- to six-layer graphene under perpendicular electric field
• Rashba spin splitting based on trilayer graphene systems
• Disorder induced field effect transistor in bilayer and trilayer graphene
• Interaction-enhanced electron-hole and valley asymmetries in the lowest Landau level of ABA-stacked trilayer graphene
• Geometric inhibition of superflow in single-layer graphene suggests a staggered-flux superconductivity in bilayer and trilayer graphene
• Quantum Parity Hall effect in ABA Graphene