Quantum Parity Hall effect in ABA Graphene

Abstract

The celebrated phenomenon of quantum Hall effect has recently been generalized from transport of conserved charges to that of other approximately conserved state variables, including spin and valley, which are characterized by spin- or valley-polarized boundary states with different chiralities. Here, we report a new class of quantum Hall effect in ABA-stacked graphene trilayers (TLG), the quantum parity Hall (QPH) effect, in which boundary channels are distinguished by even or odd parity under the systems mirror reflection symmetry. At the charge neutrality point and a small perpendicular magnetic field $B_{\perp }$, the longitudinal conductance ${\sigma }_{xx}$ is first quantized to $4e^2/h$, establishing the presence of four edge channels. As $B_{\perp }$ increases, ${\sigma }_{xx}$ first decreases to $2e^2/h$, indicating spin-polarized counter-propagating edge states, and then to approximately $0$. These behaviors arise from level crossings between even and odd parity bulk Landau levels, driven by exchange interactions with the underlying Fermi sea, which favor an ordinary insulator ground state in the strong $B_{\perp }$ limit, and a spin-polarized state at intermediate fields. The transitions between spin-polarized and unpolarized states can be tuned by varying Zeeman energy. Our findings demonstrate a topological phase that is protected by a gate-controllable symmetry and sensitive to Coulomb interactions.

References in corpus (25)

• Boron nitride substrates for high-quality graphene electronics
• The Valley Hall Effect in MoS2 Transistors
• The Quantum Spin Hall Effect: Theory and Experiment
• Detecting Topological Currents in Graphene Superlattices
• Observation of an electrically tunable band gap in trilayer graphene
• Stacking-Dependent Band Gap and Quantum Transport in Trilayer Graphene
• Carrier scattering, mobilities and electrostatic potential in mono-, bi- and tri-layer graphenes
• Tunable symmetry breaking and helical edge transport in a graphene quantum spin Hall state
• Quantum Hall effect and Landau level crossing of Dirac fermions in trilayer graphene
• Magnetic and Electronic Properties of Metal-Atom Adsorbed Graphene
• Many-body interactions in quasi-freestanding graphene
• Two-Dimensional Topological Insulator State and Topological Phase Transition in Bilayer Graphene
• Tunable Fractional Quantum Hall Phases in Bilayer Graphene
• Gate-induced interlayer asymmetry in ABA-stacked trilayer graphene
• Evidence for a Spin Phase Transition at ν=0 in Bilayer Graphene
• Landau Level Spectrum of ABA- and ABC-stacked Trilayer Graphene
• Stacking-order dependent transport properties of trilayer graphene
• Magnetoconductance Oscillations in High-Mobility Suspended Bilayer and Trilayer Graphene
• Quantum Hall Effect and Semimetallic Behavior of Dual-Gated ABA-Stacked Trilayer Graphene
• Hund's Rules for the N=0 Landau Levels of Trilayer Graphene
• Screening effects on the excitonic instability in graphene
• Strong electronic interaction and multiple quantum Hall ferromagnetic phases in trilayer graphene
• Tunable symmetries of integer and fractional quantum Hall phases in heterostructures with multiple Dirac bands
• Electrically tunable charge and spin transitions in Landau levels of interacting Dirac fermions in trilayer graphene
• Fine structure of the lowest Landau level in suspended trilayer graphene

Cited by in corpus (1)

• Quantum Anomalous Parity Hall Effect in Magnetically Disordered Topological Insulator Films