Electrically tunable charge and spin transitions in Landau levels of interacting Dirac fermions in trilayer graphene

Abstract

Trilayer graphene in the fractional Quantum Hall Effect regime displays a set of unique interaction-induced transitions that can be tuned entirely by the applied bias voltage. These transitions occur near the anti-crossing points of two Landau levels. In a large magnetic field ($>8$ T) the electron-electron interactions close the anti-crossing gap, resulting in some unusual transitions between different Landau levels. For the filling factor $\nu =\frac{2}{3}$, these transitions are accompanied by a change of spin polarization of the ground state. For a small Zeeman energy, this provides an unique opportunity to control the spin polarization of the ground state by fine tuning the bias voltage.

5 pages, 4 figures

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Cited by in corpus (9)

• Tunable symmetries of integer and fractional quantum Hall phases in heterostructures with multiple Dirac bands
• Inter-subband Landau level couplings induced by in-plane magnetic fields in trilayer graphene
• Landau level diagram and the continuous rotational symmetry breaking in trilayer graphene
• Tunability of the Fractional Quantum Hall States in Buckled Dirac Materials
• Fractional Quantum Hall Effect in Hofstadter Butterflies of Dirac Fermions
• Spin Transitions in Graphene Butterflies at an Integer Filling Factor
• Near infrared few-cycle pulses for high harmonic generation
• Fractal Butterflies of Chiral Fermions in Bilayer Graphene: Phase Transitions and Emergent Properties
• Quantum Parity Hall effect in ABA Graphene