A Stable Pfaffian State in Bilayer Graphene

Abstract

Here we show that the Pfaffian state proposed for the $\frac{5}{2}$ fractional quantum Hall states in conventional two-dimensional electron systems can be readily realized in a bilayer graphene at one of the Landau levels. The properties and stability of the Pfaffian state at this special Landau level strongly depend on the magnetic field strength. The graphene system shows a transition from the incompressible to a compressible state with increasing magnetic field. At a finite magnetic field of ~10 Tesla, the Pfaffian state in bilayer graphene becomes more stable than its counterpart in conventional electron systems.

4 pages

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Cited by in corpus (53)

• The electronic properties of bilayer graphene
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• A valley valve and electron beam splitter
• Observation of even denominator fractional quantum Hall effect in suspended bilayer graphene
• Electron-Hole Asymmetric Integer and Fractional Quantum Hall Effect in Bilayer Graphene
• Thirty Years of Composite Fermions and Beyond
• Wavefunctionology: The Special Structure of Certain Fractional Quantum Hall Wavefunctions
• Direct measurement of discrete valley and orbital quantum numbers in a multicomponent quantum Hall system
• Accurate determination of electron-hole asymmetry and next-nearest neighbor hopping in graphene
• Odd- and even-denominator fractional quantum Hall states in monolayer WSe${}_2$
• Non-Abelian Parton Fractional Quantum Hall Effect in Multilayer Graphene
• Topological Phases in the Zeroth Landau Level of Bilayer Graphene
• Tunable interactions and phase transitions in Dirac materials in a magnetic field
• Spontaneous polarization of composite fermions in the $n=1$ Landau level of graphene
• A cascade of phase transitions in an orbitally mixed half-filled Landau level
• Dynamical polarization and plasmons in a two-dimensional system with merging Dirac points
• Gap Structure of the Hofstadter System of Interacting Dirac Fermions in Graphene
• Transitions from Abelian composite fermion to non-Abelian parton fractional quantum Hall states in the zeroth Landau level of bilayer graphene
• Energy gap of the even-denominator fractional quantum Hall state in bilayer graphene
• Unconventional ${\mathbb{Z}}_n$ parton states at $\nu =7/3$: The role of finite width
• Traits and Characteristics of Interacting Dirac fermions in Monolayer and Bilayer Graphene
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• Understanding the Missing Fractional Quantum Hall States in ZnO
• Interaction-induced insulating state in thick multilayer graphene
• Widely Tunable Quantum Phase Transition from Moore-Read to Composite Fermi Liquid in Bilayer Graphene
• Incompressible States of Dirac Fermions in Graphene with Anisotropic Interactions
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• Landau quantization of multilayer graphene on a Haldane sphere
• Evidence for a topological "exciton Fermi sea" in bilayer graphene
• Competition between fractional quantum Hall liquid and electron solid phases in the Landau levels of multilayer graphene
• Tunability of the Fractional Quantum Hall States in Buckled Dirac Materials
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• Bootstrapping the Quantum Hall problem
• Fractional Quantum Hall Effect in Hofstadter Butterflies of Dirac Fermions
• Exotic Bilayer Crystals in a Strong Magnetic Field
• Spin Transitions in Graphene Butterflies at an Integer Filling Factor
• Strongly correlated states of trapped ultracold fermions in deformed Landau levels
• Quantum Hall ferromagnets and transport properties of buckled Dirac materials
• Excitation Gap of Fractal Quantum Hall States in Graphene
• Fractional quantum Hall effect of topological surface states under a strong tilted magnetic field
• Fractal Butterflies of Chiral Fermions in Bilayer Graphene: Phase Transitions and Emergent Properties
• Strong interlayer charge transfer due to exciton condensation in an electrically-isolated GaAs quantum well bilayer
• Non-Abelian topological order with SO(5)${}_1$ chiral edge states
• Fractional quantum Hall effect in bilayer graphene beyond the single Landau level approximation
• Infinite energy solutions to vortex equations governing the fractional quantum Hall effect