Controllable, driven phase transitions in the Fractional quantum Hall states in bilayer graphene

Abstract

Here we report from our theoretical studies that in biased bilayer graphene, one can induce phase transitions from an incompressible fractional quantum Hall state to a compressible state by tuning the bandgap at a given electron density. The nature of such phase transitions is different for weak and strong inter-layer coupling. Although for strong coupling more levels interact there are lesser number of transitions than for the weak coupling case. The intriguing scenario of tunable phase transitions in the fractional quantum Hall states is unique to bilayer graphene and never before existed in conventional semiconductor systems.

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• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
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Cited by in corpus (1)

• Graphene, Nobel Prize and All that Jazz