Importance of interband transitions for the fractional quantum Hall effect in bilayer graphene
arXiv:1112.1659 · doi:10.1103/PhysRevB.85.201415
Abstract
Several recent works have proposed that electron-electron interactions in bilayer graphene can be tuned with the help of external parameters, making it possible to stabilize different fractional quantum Hall states. In these prior works, phase diagrams were calculated based on a single Landau level approximation. We go beyond this approximation and investigate the influence of polarization effects and virtual interband transitions on the stability of fractional quantum Hall states in bilayer graphene. We find that for realistic values of the dielectric constant, the phase diagram is strongly modified by these effects. We illustrate this by evaluating the region of stability of the Pfaffian state.
5 pages, 4 figures + 2 pages of Supplemental Material
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- Thirty Years of Composite Fermions and Beyond
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- Non-Abelian Parton Fractional Quantum Hall Effect in Multilayer Graphene
- Topological Phases in the Zeroth Landau Level of Bilayer Graphene
- Interaction-induced insulating state in thick multilayer graphene
- Widely Tunable Quantum Phase Transition from Moore-Read to Composite Fermi Liquid in Bilayer Graphene
- Landau level transitions indoped graphene in a time dependent magnetic field
- Phase diagram of the quantum Hall state in bilayer graphene
- Competing Laughlin state and Wigner crystal in bilayer graphene
- Strongly correlated states of trapped ultracold fermions in deformed Landau levels
- Fractional quantum Hall effect in bilayer graphene beyond the single Landau level approximation
- Infinite energy solutions to vortex equations governing the fractional quantum Hall effect