Multicomponent fractional quantum Hall effect in graphene

Abstract

We report observation of the fractional quantum Hall effect (FQHE) in high mobility multi-terminal graphene devices, fabricated on a single crystal boron nitride substrate. We observe an unexpected hierarchy in the emergent FQHE states that may be explained by strongly interacting composite Fermions with full SU(4) symmetric underlying degrees of freedom. The FQHE gaps are measured from temperature dependent transport to be up 10 times larger than in any other semiconductor system. The remarkable strength and unusual hierarcy of the FQHE described here provides a unique opportunity to probe correlated behavior in the presence of expanded quantum degrees of freedom.

5 pages, 3 figures

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• Fractional Quantum Hall Effects in Graphene and Its Bilayer
• Atypical Fractional Quantum Hall Effect in Graphene at Filling Factor 1/3
• Coupled charge and valley excitations in graphene quantum Hall ferromagnets
• Composite fermion valley polarization energies: Evidence for particle-hole asymmetry
• Signatures of spin in the n=1/3 Fractional Quantum Hall Effect

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