Abelian Chern-Simons Theory for the Fractional Quantum Hall Effect in Graphene

Abstract

We develop a theory for the pseudorelativistic fractional quantum Hall effect in graphene, which is based on a multicomponent abelian Chern-Simons theory in the fermionic functional integral approach. Calculations are performed in the Keldysh formalism, directly giving access to real-time correlation functions at finite temperature. We obtain an exact effective action for the Chern-Simons gauge fields, which is expanded to second order in the gauge field fluctations around the mean-field solution. The one-loop fermionic polarization tensor as well as the electromagnetic response tensor in random phase approximation are derived, from which we obtain the Hall conductivities for various FQH states, lying symmetrically around charge neutrality.

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Cited by in corpus (5)

• Pseudo Quantum Electrodynamics and Chern-Simons theory Coupled to Two-dimensional Electrons
• New point-like sources and a conducting surface in Maxwell-Chern-Simons electrodynamics
• Incompressible Even Denominator Fractional Quantum Hall States in the Zeroth Landau Level of Monolayer Graphene
• Time-reversal odd transport in bilayer graphene: Hall conductivity and Hall viscosity
• Collective excitations of fractional quantum Hall states in monolayer graphene