Field induced quantum-Hall ferromagnetism in suspended bilayer graphene
arXiv:1112.5368 · doi:10.1103/PhysRevB.85.115408
Abstract
We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher fields the eight-fold degenerated lowest Landau level lifts completely. Both the sequence of this symmetry breaking and the strong transition of the gap-size point to a ferromagnetic nature of the insulating phase developing at the charge neutrality point.
7 pages, 5 figures
References in corpus (18)
- Electric Field Effect in Atomically Thin Carbon Films
- Ultrahigh electron mobility in suspended graphene
- Boron nitride substrates for high-quality graphene electronics
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Making graphene visible
- Asymmetry gap in the electronic band structure of bilayer graphene
- Current-induced cleaning of graphene
- Multicomponent fractional quantum Hall effect in graphene
- Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
- Quantized conductance of a suspended graphene nanoconstriction
- Local Compressibility Measurements of Correlated States in Suspended Bilayer Graphene
- Lattice Theory of Pseudospin Ferromagnetism in Bilayer Graphene: Competing Orders and Interaction Induced Quantum Hall States
- Intra-Landau level Cyclotron Resonance in Bilayer Graphene
- Large yield production of high mobility freely suspended graphene electronic devices on a PMGI based organic polymer
- Conformal Invariance and Shape-Dependent Conductance of Graphene Samples
- Spin-Polarized to Valley-Polarized Transition in Graphene Bilayers at in High Magnetic Fields
- Electron Interactions in Bilayer Graphene: Marginal Fermi Liquid Behaviour and Zero Bias Anomaly
- Quantum Hall activation gaps in bilayer graphene
Cited by in corpus (24)
- The electronic properties of bilayer graphene
- Electronic properties of graphene-based bilayer systems
- Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride
- Transport Gap in Suspended Bilayer Graphene at Zero Magnetic Field
- Many-body effects in twisted bilayer graphene at low twist angles
- Broken-symmetry quantum Hall states in bilayer graphene: Landau level mixing and dynamical screening
- Spin Symmetry of the Bilayer Graphene Groundstate
- Magneto-optical and optical probes of gapped ground states of bilayer graphene
- Distinct Competing Ordered ν=2 States in Bilayer Graphene
- Quantum Hall transport as a probe of capacitance profile at graphene edges
- Energy gaps and layer polarization of integer and fractional quantum Hall states in bilayer graphene
- Fine structure of the lowest Landau level in suspended trilayer graphene
- Transport Measurement of Landau level Gaps in Bilayer Graphene
- Gap generation in ABC-stacked multilayer graphene: screening vs band flattening
- Theory of inter-Landau level magnetoexcitons in bilayer graphene
- Energetics of complex phase diagram in a tunable bilayer graphene probed by quantum capacitance
- Electromagnetic absorption and Kerr effect in quantum Hall ferromagnetic states of bilayer graphene
- Particle-hole symmetry and bifurcating ground state manifold in the quantum Hall ferromagnetic states of multilayer graphene
- Spin-Polarized-Current State of Electrons in Bilayer Graphene
- Electron-electron interactions in non-equilibrium bilayer graphene
- Broken symmetry states in bilayer graphene in electric and in-plane magnetic fields
- Current orderings of interacting electrons in bilayer graphene
- Competing topological phases in few-layer graphene
- Phase boundary of spin-polarized-current state of electrons in bilayer graphene