Current-induced cleaning of graphene

Abstract

A simple yet highly reproducible method to suppress contamination of graphene at low temperature inside the cryostat is presented. The method consists of applying a current of several mA through the graphene device, which is here typically a few $\mu$m wide. This ultra-high current density is shown to remove contamination adsorbed on the surface. This method is well suited for quantum electron transport studies of undoped graphene devices, and its utility is demonstrated here by measuring the anomalous quantum Hall effect.

Accepted for publication in Applied Physics Letters

References in corpus (5)

• Detection of Individual Gas Molecules Absorbed on Graphene
• Atomic Structure of Graphene on SiO2
• Unconventional Integer Quantum Hall effect in graphene
• Bipolar supercurrent in graphene
• High-Resolution Scanning Tunneling Microscopy Imaging of Mesoscopic Graphene Sheets on an Insulating Surface

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• Selective epitaxial growth of graphene on SiC
• Electric-field-induced lifting of the valley degeneracy in alpha-(BEDT-TTF)_2I_3 Dirac-like Landau levels