Graphene enhanced field emission from InP nanocrystals
arXiv:1708.01877 · doi:10.1088/1361-6528/aa96e6
Abstract
We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP nanocrystals with graphene. The measurements are performed inside a scanning electron microscope chamber with a nano-controlled W-thread used as an anode. We analyze the field emission by Fowler-Nordheim theory and find that the field enhancement factor increases monotonically with the spacing between the anode and the cathode. We also show that InP/p-Si junction has a rectifying behavior, while graphene on InP creates an ohmic contact. Understanding the fundamentals of such nanojunctions is key for applications in nanoelectronics.
arXiv comment7 pages, 3 figures
References in corpus (17)
- Electric Field Effect in Atomically Thin Carbon Films
- Suspended Graphene: a bridge to the Dirac point
- Doping graphene with metal contacts
- Current-induced cleaning of graphene
- Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
- The role of contact resistance in graphene field-effect devices
- Melting temperature of graphene
- Hybrid Graphene/Silicon Schottky photodiode with intrinsic gating effect
- Field emission from single and few-layer graphene flakes
- A local field emission study of partially aligned carbon-nanotubes by AFM probe
- Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate
- Field emission from single multi-wall carbon nanotubes
- Local probing of the field emission stability of vertically aligned multiwalled carbon nanotubes
- Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays
- Field emission properties of as-grown multiwalled carbon nanotube films
- Field emission from self-catalyzed GaAs nanowires
- Transport and field emission properties of buckypapers obtained from aligned carbon nanotubes
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