Field emission in ultrathin PdSe2 back-gated transistors

Abstract

We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type conduction at low pressure. The electron conduction, combined with the sharp edge and the workfunction decreasing with the number of layers, opens the way to applications of PdSe2 nanosheets in vacuum electronics. In this work, we demonstrate field emission from few-layer PdSe2 nanosheets with current up to the uA and turn-on field below 100 V/um, thus extending the plethora of applications of this recently isolated pentagonal layered material.

arXiv comment12 pages, 4 figures

References in corpus (17)

• Hysteresis in the transfer characteristics of MoS2 transistors
• Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
• Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
• Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors
• A WSe2 vertical field emission transistor
• Field emission from single and few-layer graphene flakes
• A local field emission study of partially aligned carbon-nanotubes by AFM probe
• Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate
• Comments on the continuing widespread and unnecessary use of a defective emission equation in field emission related literature
• Field emission from single multi-wall carbon nanotubes
• Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors
• Environmental effects on the electrical characteristics of back-gated WSe2 field effect transistors
• Graphene enhanced field emission from InP nanocrystals
• Field Emission Characterization of MoS2 Nanoflowers
• Local probing of the field emission stability of vertically aligned multiwalled carbon nanotubes
• Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays
• Field emission from self-catalyzed GaAs nanowires

Cited by in corpus (5)

• A current-voltage model for double Schottky barrier devices
• Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors
• Electron irradiation on multilayer PdSe${}_2$ field effect transistors
• Isotropic conduction and negative photoconduction in ultrathin PtSe${}_2$ films
• Field emission from two-dimensional GeAs