A current-voltage model for double Schottky barrier devices

Abstract

Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been playing a major role in the investigation of the electrical properties of mono and two-dimensional nanostructured materials, although their impact on the current-voltage characteristics has been frequently neglected or misunderstood. In this work, we propose a single equation to describe the current-voltage characteristics of two-terminal semiconductor devices with Schottky contacts. We apply the equation to numerically simulate the electrical behaviour for both ideal and non-ideal Schottky barriers. The proposed model can be used to directly estimate the Schottky barrier height and the ideality factor. We apply it to perfectly reproduce the experimental current-voltage characteristics of ultrathin molybdenum disulphide or tungsten diselenide nanosheets and tungsten disulphide nanotubes. The model constitutes a useful tool for the analysis and the extraction of relevant transport parameters in any two-terminal device with Schottky contacts.

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Cited by in corpus (2)

• Non-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots
• Strain effects in phosphorous bound exciton transitions in silicon