activity
20182023
most citedAsymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

222 citations · 971 across the 15 of their papers we have counts for

collaborators

16 papers

cond-mat.mes-hall2023★ 106 cited

Gas dependent hysteresis in MoS field effect transistors

F. Urban, F. Giubileo, A. Grillo +10

We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistor…

cond-mat.mes-hall2021

Memory effects in black phosphorus field effect transistors

Alessandro Grillo, Aniello Pelella, Enver Faella +5

We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer char…

cond-mat.mtrl-sci2021★ 105 cited

Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors

Alessandro Grillo, Enver Faella, Aniello Pelella +6

Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental press…

cond-mat.mes-hall2021

Graphene-silicon device for visible and infrared photodetection

Aniello Pelella, Alessandro Grillo, Enver Faella +3

The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an impo…

physics.app-ph2020★ 107 cited

A current-voltage model for double Schottky barrier devices

Alessandro Grillo, Antonio Di Bartolomeo

Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been play…

physics.app-ph2020★ 1 cited

Gate-controlled field emission current from MoS nanosheets

Aniello Pelella, Alessandro Grillo, Francesca Urban +6

Monolayer molybdenum disulfide (MoS) nanosheets, obtained via chemical vapor deposition onto SiO/Si substrates, are exploited to fabricate field-effect transistors with n-t…