Electron irradiation on multilayer PdSe${}_2$ field effect transistors

Abstract

Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical properties largely tunable by the number of layers. In this work, PdSe2 is used in the form of multilayer as the channel of back-gate field-effect transistors, which are studied under repeated electron irradiations. Source-drain Pd leads enable contacts with resistance below 350 kOhm um. The transistors exhibit a prevailing n-type conduction in high vacuum, which reversibly turns into ambipolar electric transport at atmospheric pressure. Irradiation by 10 keV electrons suppresses the channel conductance and promptly transforms the device from n-type to p-type. An electron fluence as low as 160 e-/nm2 dramatically change the transistor behavior demonstrating a high sensitivity of PdSe2 to electron irradiation. The sensitivity is lost after few exposures, that is a saturation condition is reached for fluence higher than 4000 e-/nm2. The damage induced by high electron fluence is irreversible as the device persist in the radiation-modified state for several hours, if kept in vacuum and at room temperature. With the support of numerical simulation, we explain such a behavior by electron-induced Se atom vacancy formation and charge trapping in slow trap states at the Si/SiO_2 interface.

15 pages, 4 figures

References in corpus (20)

• The electronic properties of graphene
• Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
• Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
• From Graphene constrictions to single carbon chains
• Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability
• Hysteresis in the transfer characteristics of MoS2 transistors
• The role of contact resistance in graphene field-effect devices
• Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances
• Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
• Effect of electron-beam irradiation on graphene field effect devices
• Radiation tolerance of two-dimensional material-based devices for space applications
• Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors
• A WSe2 vertical field emission transistor
• Graphene-Silicon Schottky diodes for photodetection
• Field emission in ultrathin PdSe2 back-gated transistors
• Environmental effects on the electrical characteristics of back-gated WSe2 field effect transistors
• Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors
• Annealing shallow Si/SiO${}_2$ interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors
• Low-energy electron-irradiation effect on transport properties of graphene field effect transistor
• Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods

Cited by in corpus (4)

• Electron irradiation of metal contacts in monolayer MoS${}_2$ Field-Effect Transistors
• Isotropic conduction and negative photoconduction in ultrathin PtSe${}_2$ films
• Field emission from two-dimensional GeAs
• Layer-dependent Optical and Dielectric Properties of Large-size PdSe${}_2$ Films Grown by Chemical Vapor Deposition