306 citations · 1.3k across the 13 of their papers we have counts for
14 papers
Memory effects in black phosphorus field effect transistors
Alessandro Grillo, Aniello Pelella, Enver Faella +5
We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer char…
Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors
Alessandro Grillo, Enver Faella, Aniello Pelella +6
Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental press…
Isotropic conduction and negative photoconduction in ultrathin PtSe films
Francesca Urban, Farzan Gity, Paul K. Hurley +2
PtSe ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white lase…
Field emission from two-dimensional GeAs
Antonio Di Bartolomeo, Alessandro Grillo, Filippo Giubileo +4
GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated mul…
Field emission characteristics of InSb patterned nanowires
Filippo Giubileo, Maurizio Passacantando, Francesca Urban +6
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb…
Electron irradiation of metal contacts in monolayer MoS Field-Effect Transistors
A. Pelella, O. Kharsah, A. Grillo +9
This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS) field-effect transistors (FETs). We show that the expo…
Electron irradiation on multilayer PdSe field effect transistors
A. Di Bartolomeo, F. Urban, A. Pelella +4
Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical propert…
Field Emission Characterization of MoS2 Nanoflowers
Filippo Giubileo, Alessandro Grillo, Maurizio Passacantando +7
Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and chara…
Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors
Antonio Di Bartolomeo, Aniello Pelella, Xiaowei Liu +7
A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We…
Environmental effects on the electrical characteristics of back-gated WSe2 field effect transistors
Francesca Urban, Lisanne Peters, Nadia Martucciello +2
We study the effect of polymer coating, pressure and temperature on the electrical characteristics of monolayer WSe2 back-gated transistors with quasi-ohmic Ni/Au contacts. We find…
A WSe2 vertical field emission transistor
Antonio Di Bartolomeo, Francesca Urban, Maurizio Passacantando +6
We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrat…
Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
Antonio Di Bartolomeo, Alessandro Grillo, Francesca Urban +8
We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized…
Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors
Filippo Giubileo, Laura Iemmo, Maurizio Passacantando +6
Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to…
Hysteresis in the transfer characteristics of MoS2 transistors
Antonio Di Bartolomeo, Luca Genovese, Filippo Giubileo +4
We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hyster…