activity
20172021
most citedHysteresis in the transfer characteristics of MoS2 transistors

306 citations · 475 across the 4 of their papers we have counts for

collaborators

14 papers

cond-mat.mes-hall2021

Memory effects in black phosphorus field effect transistors

Alessandro Grillo, Aniello Pelella, Enver Faella +5

We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer char…

cond-mat.mtrl-sci2021105 cited

Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors

Alessandro Grillo, Enver Faella, Aniello Pelella +6

Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental press…

physics.app-ph2020

Isotropic conduction and negative photoconduction in ultrathin PtSe films

Francesca Urban, Farzan Gity, Paul K. Hurley +2

PtSe ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white lase…

physics.app-ph2020

Field emission from two-dimensional GeAs

Antonio Di Bartolomeo, Alessandro Grillo, Filippo Giubileo +4

GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated mul…

cond-mat.mes-hall2020

Field emission characteristics of InSb patterned nanowires

Filippo Giubileo, Maurizio Passacantando, Francesca Urban +6

InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb…

physics.app-ph2020

Electron irradiation of metal contacts in monolayer MoS Field-Effect Transistors

A. Pelella, O. Kharsah, A. Grillo +9

This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS) field-effect transistors (FETs). We show that the expo…