607 citations · 2.8k across the 31 of their papers we have counts for
31 papers
Optically Tunable Threshold Switching and Thermally Activated Transport in Planar Ag/MAPbI Thin Single-Crystal Devices
Ofelia Durante, Valeria Demontis, Sebastiano De Stefano +14
Halide perovskites have enabled major advances in optoelectronics, extending well beyond photovoltaics. Their mixed ionic-electronic conduction, once regarded as detrimental to dev…
Topology-Enhanced Superconducting Qubit Networks for In-Sensor Quantum Information Processing
J. Settino, G. G. Luciano, A. Di Bartolomeo +4
We investigate the influence of topology on the magnetic response of inductively coupled superconducting flux-qubit networks. Using exact diagonalization methods and linear respons…
Gas dependent hysteresis in MoS field effect transistors
F. Urban, F. Giubileo, A. Grillo +10
We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistor…
Manipulation of the electrical and memory properties of MoS field-effect transistors by highly charged ion irradiation
Stephan Sleziona, Aniello Pelella, Enver Faella +6
Field-effect transistors based on molybdenum disulfide (MoS) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hy…
Graphene-silicon device for visible and infrared photodetection
Aniello Pelella, Alessandro Grillo, Enver Faella +3
The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an impo…
A current-voltage model for double Schottky barrier devices
Alessandro Grillo, Antonio Di Bartolomeo
Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been play…
Gate-controlled field emission current from MoS nanosheets
Aniello Pelella, Alessandro Grillo, Francesca Urban +6
Monolayer molybdenum disulfide (MoS) nanosheets, obtained via chemical vapor deposition onto SiO/Si substrates, are exploited to fabricate field-effect transistors with n-t…
Field emission in ultrathin PdSe2 back-gated transistors
A. Di Bartolomeo, A. Pelella, F. Urban +5
We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type…
Multi-walled carbon nanotube films for the measurement of the alcoholic concentration
C. Giordano, G. Filatrella, Maria Sarno +1
We show that a multi-walled carbon nanotube film can be used as the sensing element of a low-cost sensor for the alcoholic concentration in liquid solutions. To this purpose, we in…
Graphene-Silicon Schottky diodes for photodetection
Antonio Di Bartolomeo, Giuseppe Luongo, Laura Iemmo +1
We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, re…
Field emission from self-catalyzed GaAs nanowires
Filippo Giubileo, Antonio Di Bartolomeo, Laura Iemmo +5
We report observation of field emission from self-catalyzed GaAs nanowires grown on Si (111). The measurements are realized inside a scanning electron microscope chamber with nano-…
Graphene enhanced field emission from InP nanocrystals
L. Iemmo, A. Di Bartolomeo, F. Giubileo +6
We report the observation of field emission from InP nanocrystals epitaxially grown on an array of p-Si nanotips. We prove that field emission can be enhanced by covering the InP n…
The role of contact resistance in graphene field-effect devices
Filippo Giubileo, Antonio Di Bartolomeo
The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limit…
Electrical transport and persistent photoconductivity in monolayer MoS2 phototransistors
Antonio Di Bartolomeo, Luca Genovese, Tobias Foller +6
We study electrical transport properties in exfoliated molybdenum disulfide (MoS2) back-gated field effect transistors at low drain bias and under different illumination intensitie…
Hybrid Graphene/Silicon Schottky photodiode with intrinsic gating effect
Antonio Di Bartolomeo, Giuseppe Luongo, Filippo Giubileo +5
We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricat…
Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays
Antonio Di Bartolomeo, Maurizio Passacantando, Gang Niu +4
We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use X-ray photoelectron spectroscopy to confirm a metallic b…
Low-energy electron-irradiation effect on transport properties of graphene field effect transistor
F. Giubileo, A. Di Bartolomeo, N. Martucciello +4
We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and…
Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
Antonio Di Bartolomeo, Filippo Giubileo, Giuseppe Luongo +7
We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patte…
Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate
Antonio Di Bartolomeo, Filippo Giubileo, Laura Iemmo +6
We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We dem…
Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics
Antonio Di Bartolomeo, Filippo Giubileo, Francesco Romeo +5
We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure rang…
Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
Antonio Di Bartolomeo
In the past decade graphene has been one of the most studied material for several unique and excellent properties. Due to its two dimensional nature, physical and chemical properti…
Local characterization of ferromagnetic properties in ferromagnet/superconductor bilayer by Point Contact Andreev Reflection Spectroscopy
Filippo Giubileo, Francesco Romeo, Roberta Citro +5
We realized point contact spectroscopy experiment on ferromagnet/superconductor bilayers. Differential conductance curves show several features that we explained within Bogoliubov-…
Effect of back-gate on contact resistance and on channel conductance in graphene-based field-effect transistors
A. Di Bartolomeo, S. Santandrea, F. Giubileo +7
We study the contact resistance and the transfer characteristics of back-gated field effect transistors of mono- and bi-layer graphene. We measure specific contact resistivity of ~…
Impurity effects on Fabry-Perot physics of ballistic carbon nanotubes
F. Romeo, R. Citro, A. Di Bartolomeo
We present a theoretical model accounting for the anomalous Fabry-Perot pattern observed in the ballistic conductance of a single-wall carbon nanotubes. Using the scattering field…