Graphene-Silicon Schottky diodes for photodetection

Abstract

We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, respectively. We demonstrate record photo responsivity, exceeding 2.5 A/W under white light, which we attribute to the contribution of charges photogenerated in the surrounding region of the flat junction or to the internal gain by impact ionization caused by the enhanced field on the nanotips.

5 pages, 9 figures

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Cited by in corpus (6)

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• Electron irradiation of metal contacts in monolayer MoS${}_2$ Field-Effect Transistors
• Electron irradiation on multilayer PdSe${}_2$ field effect transistors
• Plasmon-enhanced graphene photodetector with CMOS-compatible titanium nitride
• Graphene-silicon device for visible and infrared photodetection