activity
20162023
most citedHysteresis in the transfer characteristics of MoS2 transistors

306 citations · 1.7k across the 14 of their papers we have counts for

collaborators

14 papers

cond-mat.mes-hall2023★ 106 cited

Gas dependent hysteresis in MoS field effect transistors

F. Urban, F. Giubileo, A. Grillo +10

We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistor…

cond-mat.mes-hall2021

Graphene-silicon device for visible and infrared photodetection

Aniello Pelella, Alessandro Grillo, Enver Faella +3

The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an impo…

cond-mat.mes-hall2019★ 64 cited

Field Emission Characterization of MoS2 Nanoflowers

Filippo Giubileo, Alessandro Grillo, Maurizio Passacantando +7

Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and chara…

cond-mat.mes-hall2018★ 123 cited

A WSe2 vertical field emission transistor

Antonio Di Bartolomeo, Francesca Urban, Maurizio Passacantando +6

We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrat…

cond-mat.mes-hall2018★ 222 cited

Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors

Antonio Di Bartolomeo, Alessandro Grillo, Francesca Urban +8

We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized…

physics.app-ph2018★ 70 cited

Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors

Filippo Giubileo, Laura Iemmo, Maurizio Passacantando +6

Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to…