Gas dependent hysteresis in MoS${}_2$ field effect transistors

Abstract

We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal structure facilitates the adsorption of oxygen, nitrogen, hydrogen or methane, which strongly affect the transistor electrical characteristics. Although the gas adsorption does not modify the conduction type, we demonstrate a correlation between hysteresis width and adsorption energy onto the MoS2 surface. We show that hysteresis is controllable by pressure and/or gas type. Hysteresis features two well-separated current levels, especially when gases are stably adsorbed on the channel, which can be exploited in memory devices.

arXiv comment8 pages, 5 figures

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• Apparent Differences between Single Layer Molybdenum Disulfide Fabricated via Chemical Vapor Deposition and Exfoliation
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• Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods
• Dynamic Growth/Etching Model for the Synthesis of Two-Dimensional Transition Metal Dichalcogenides via Chemical Vapour Deposition
• Role of Defect Induced Interfacial States in Molecular Sensing: Ultrahigh- Sensitive Region for Molecular Interaction
• Vacuum gauge from ultrathin MoS2 transistor
• Fast transient charge trapping in salt-aided CVD synthesized monolayer MoS2 field-effect transistor