222 citations · 1.1k across the 15 of their papers we have counts for
16 papers
Gas dependent hysteresis in MoS field effect transistors
F. Urban, F. Giubileo, A. Grillo +10
We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistor…
Gate-controlled field emission current from MoS nanosheets
Aniello Pelella, Alessandro Grillo, Francesca Urban +6
Monolayer molybdenum disulfide (MoS) nanosheets, obtained via chemical vapor deposition onto SiO/Si substrates, are exploited to fabricate field-effect transistors with n-t…
Isotropic conduction and negative photoconduction in ultrathin PtSe films
Francesca Urban, Farzan Gity, Paul K. Hurley +2
PtSe ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white lase…
Vacuum gauge from ultrathin MoS2 transistor
A. Di Bartolomeo, A. Pelella, A. Grillo +5
We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the…
Field emission characteristics of InSb patterned nanowires
Filippo Giubileo, Maurizio Passacantando, Francesca Urban +6
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb…
Electron irradiation of metal contacts in monolayer MoS Field-Effect Transistors
A. Pelella, O. Kharsah, A. Grillo +9
This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS) field-effect transistors (FETs). We show that the expo…
Electron irradiation on multilayer PdSe field effect transistors
A. Di Bartolomeo, F. Urban, A. Pelella +4
Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical propert…
Field emission in ultrathin PdSe2 back-gated transistors
A. Di Bartolomeo, A. Pelella, F. Urban +5
We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type…
Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods
Francesca Urban, Grzegorz Lupina, Alessandro Grillo +2
The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resis…
Field Emission Characterization of MoS2 Nanoflowers
Filippo Giubileo, Alessandro Grillo, Maurizio Passacantando +7
Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and chara…
Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors
Antonio Di Bartolomeo, Aniello Pelella, Xiaowei Liu +7
A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We…
Environmental effects on the electrical characteristics of back-gated WSe2 field effect transistors
Francesca Urban, Lisanne Peters, Nadia Martucciello +2
We study the effect of polymer coating, pressure and temperature on the electrical characteristics of monolayer WSe2 back-gated transistors with quasi-ohmic Ni/Au contacts. We find…
A WSe2 vertical field emission transistor
Antonio Di Bartolomeo, Francesca Urban, Maurizio Passacantando +6
We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrat…
Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
Antonio Di Bartolomeo, Alessandro Grillo, Francesca Urban +8
We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized…
Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors
Filippo Giubileo, Laura Iemmo, Maurizio Passacantando +6
Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to…
Graphene-Silicon Schottky diodes for photodetection
Antonio Di Bartolomeo, Giuseppe Luongo, Laura Iemmo +1
We present the optoelectronic characterization of two graphene/silicon Schottky junctions, fabricated by transferring CVD-graphene on flat and nanotip-patterned n-Si substrates, re…