Field Emission Characterization of MoS2 Nanoflowers

Abstract

Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and characterized their field emission properties, by applying a tip-anode configuration in which a tungsten tip with curvature radius down to 30-100nm has been used as the anode to measure local properties from small areas down to 1-100um2. We demonstrate that MoS2 nanoflowers can be competitive with other well-established field emitters. Indeed, we show that a stable field emission current can be measured with a turn-on field as low as 12 V um-1 and a field enhancement factor up to 880 at 600nm cathode-anode separation distance.

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Cited by in corpus (6)

• Gas dependent hysteresis in MoS${}_2$ field effect transistors
• Field emission in ultrathin PdSe2 back-gated transistors
• Electron irradiation of metal contacts in monolayer MoS${}_2$ Field-Effect Transistors
• Field emission from two-dimensional GeAs
• Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods
• General form of the tunnelling barrier for nanometrically sharp electron emitters