133 citations · 493 across the 11 of their papers we have counts for
12 papers
Manipulation of the electrical and memory properties of MoS field-effect transistors by highly charged ion irradiation
Stephan Sleziona, Aniello Pelella, Enver Faella +6
Field-effect transistors based on molybdenum disulfide (MoS) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hy…
Memory effects in black phosphorus field effect transistors
Alessandro Grillo, Aniello Pelella, Enver Faella +5
We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer char…
Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors
Alessandro Grillo, Enver Faella, Aniello Pelella +6
Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental press…
Graphene-silicon device for visible and infrared photodetection
Aniello Pelella, Alessandro Grillo, Enver Faella +3
The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an impo…
Gate-controlled field emission current from MoS nanosheets
Aniello Pelella, Alessandro Grillo, Francesca Urban +6
Monolayer molybdenum disulfide (MoS) nanosheets, obtained via chemical vapor deposition onto SiO/Si substrates, are exploited to fabricate field-effect transistors with n-t…
Vacuum gauge from ultrathin MoS2 transistor
A. Di Bartolomeo, A. Pelella, A. Grillo +5
We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the…
Field emission characteristics of InSb patterned nanowires
Filippo Giubileo, Maurizio Passacantando, Francesca Urban +6
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb…
Electron irradiation of metal contacts in monolayer MoS Field-Effect Transistors
A. Pelella, O. Kharsah, A. Grillo +9
This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS) field-effect transistors (FETs). We show that the expo…
Electron irradiation on multilayer PdSe field effect transistors
A. Di Bartolomeo, F. Urban, A. Pelella +4
Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical propert…
Field emission in ultrathin PdSe2 back-gated transistors
A. Di Bartolomeo, A. Pelella, F. Urban +5
We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type…
Field Emission Characterization of MoS2 Nanoflowers
Filippo Giubileo, Alessandro Grillo, Maurizio Passacantando +7
Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and chara…
Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors
Antonio Di Bartolomeo, Aniello Pelella, Xiaowei Liu +7
A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We…