133 citations · 493 across the 11 of their papers we have counts for
12 papers
Manipulation of the electrical and memory properties of MoS field-effect transistors by highly charged ion irradiation
Stephan Sleziona, Aniello Pelella, Enver Faella +6
Field-effect transistors based on molybdenum disulfide (MoS) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hy…
Memory effects in black phosphorus field effect transistors
Alessandro Grillo, Aniello Pelella, Enver Faella +5
We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer char…
Coexistence of negative and positive photoconductivity in few-layer PtSe2 field-effect transistors
Alessandro Grillo, Enver Faella, Aniello Pelella +6
Platinum diselenide (PtSe_2) field-effect transistors with ultrathin channel regions exhibit p-type electrical conductivity that is sensitive to temperature and environmental press…
Graphene-silicon device for visible and infrared photodetection
Aniello Pelella, Alessandro Grillo, Enver Faella +3
The fabrication of graphene-silicon (Gr-Si) junction inolves the formation of a parallel metal-insulator-semiconductor (MIS) structure, which is often disregarded but plays an impo…
Gate-controlled field emission current from MoS nanosheets
Aniello Pelella, Alessandro Grillo, Francesca Urban +6
Monolayer molybdenum disulfide (MoS) nanosheets, obtained via chemical vapor deposition onto SiO/Si substrates, are exploited to fabricate field-effect transistors with n-t…
Vacuum gauge from ultrathin MoS2 transistor
A. Di Bartolomeo, A. Pelella, A. Grillo +5
We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the…