Manipulation of the electrical and memory properties of MoS${}_2$ field-effect transistors by highly charged ion irradiation

Stephan Sleziona, Aniello Pelella, Enver Faella +6

Field-effect transistors based on molybdenum disulfide (MoS${}_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hy…