Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays
arXiv:1608.02511 · doi:10.1088/0957-4484/27/48/485707
Abstract
We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use X-ray photoelectron spectroscopy to confirm a metallic behavior of the nanoparticle surface due to partial Sn segregation as well as the presence of a superficial Ge oxide. We report the observation of stable field emission current from the GeSn-nanoparticles. We prove that field emission can be enhanced by preventing GeSn nanoparticles oxidation or by breaking the oxide layer through electrical stress. Finally, we show that GeSn/p-Si junctions have a rectifying behavior.
arXiv commentResearch paper. 7 pages, 4 figures
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