294 citations · 1.3k across the 16 of their papers we have counts for
16 papers
Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods
Francesca Urban, Grzegorz Lupina, Alessandro Grillo +2
The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resis…
Hybrid Graphene/Silicon Schottky photodiode with intrinsic gating effect
Antonio Di Bartolomeo, Giuseppe Luongo, Filippo Giubileo +5
We propose a hybrid device consisting of a graphene/silicon (Gr/Si) Schottky diode in parallel with a Gr/SiO2/Si capacitor for high-performance photodetection. The device, fabricat…
Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays
Antonio Di Bartolomeo, Maurizio Passacantando, Gang Niu +4
We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use X-ray photoelectron spectroscopy to confirm a metallic b…
Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
Antonio Di Bartolomeo, Filippo Giubileo, Giuseppe Luongo +7
We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patte…
Plasma-enhanced chemical vapor deposition of amorphous Si on graphene
G. Lupina, C. Strobel, J. Dabrowski +8
Plasma-enhanced chemical vapor deposition of thin a-Si:H layers on transferred large area graphene is investigated. Radio frequency (RF, 13.56 MHz) and very high frequency (VHF, 14…
Direct growth of low-doped graphene on Ge/Si(001) surfaces
J. Dabrowski, G. Lippert, J. Avila +12
The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream techno…
Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics
Antonio Di Bartolomeo, Filippo Giubileo, Francesco Romeo +5
We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure rang…
Residual Metallic Contamination of Transferred Chemical Vapor Deposited Graphene
Grzegorz Lupina, Julia Kitzmann, Ioan Costina +15
Integration of graphene with Si microelectronics is very appealing by offering potentially a broad range of new functionalities. New materials to be integrated with Si platform mus…
Deposition of thin silicon layers on transferred large area CVD graphene
Grzegorz Lupina, Julia Kitzmann, Mindaugas Lukosius +3
Physical vapor deposition of Si onto transferred graphene is investigated. At elevated temperatures, Si nucleates preferably on wrinkles and multilayer graphene islands. In some ca…
Graphene Grown on Ge(001) from Atomic Source
Gunther Lippert, Jarek Dabrowski, Thomas Schroeder +8
Among the many anticipated applications of graphene, some - such as transistors for Si microelectronics - would greatly benefit from the possibility to deposit graphene directly on…
Nucleation and growth of HfO layers on graphene by CVD
Grzegorz Lupina, Mindaugas Lukosius, Julia Kitzmann +3
A seed layer-free growth of HfO on commercially available CVD graphene from various suppliers is investigated. It is revealed that the samples of monolayer graphene transferred…
A Graphene-based Hot Electron Transistor
Sam Vaziri, Grzegorz Lupina, Christoph Henkel +6
We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially comp…
Molecular beam growth of graphene on mica
Gunther Lippert, Jarek Dabrowski, Yuji Yamamoto +5
We demonstrate molecular beam growth of graphene on biotite mica substrates at temperatures below 1000°C. As indicated by optical and atomic force microscopy, evaporation of carbon…
Vertical Graphene Base Transistor
Wolfgang Mehr, J. Christoph Scheytt, Jarek Dabrowski +5
We present a novel, graphene-based device concept for high-frequency operation: a hot electron graphene base transistor (GBT). Simulations show that GBTs have high current on/off r…
Direct Graphene Growth on Insulator
Gunther Lippert, Jarek Dabrowski, Max C. Lemme +3
Fabrication of graphene devices is often hindered by incompatibility between the silicon technology and the methods of graphene growth. Exfoliation from graphite yields excellent f…
Charge transfer and trapping as origin of a double dip in the transfer characteristics of graphene based field-effect transistors
Antonio Di Bartolomeo, Filippo Giubileo, Salvatore Santandrea +4
We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is…