Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics

Abstract

We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10-4 mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.

10 pages, Research Paper

References in corpus (17)

• The Raman Fingerprint of Graphene
• Detection of Individual Gas Molecules Absorbed on Graphene
• Doping graphene with metal contacts
• Adsorption of H2O, NH3, CO, NO2, and NO on graphene: A first-principles study
• Charged Impurity Scattering in Graphene
• A self-consistent theory for graphene transport
• Bipolar supercurrent in graphene
• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
• Epitaxial graphene transistors on SiC substrates
• Evidence of the role of contacts on the observed electron-hole asymmetry in graphene
• Charge Transport and Inhomogeneity near the Charge Neutrality Point in Graphene
• Numbers of donors and acceptors from transport measurements in graphene
• Evidence for Strain-Induced Local Conductance Modulations in Single-Layer Graphene on SiO2
• Conductance asymmetry of graphene pn junction
• Quantum Hall effect in graphene with superconducting electrodes
• Charge-density depinning at metal contacts of graphene field-effect transistors
• Electrical transport across metal/two-dimensional carbon junctions: Edge versus side contacts

Cited by in corpus (14)

• Hysteresis in the transfer characteristics of MoS2 transistors
• The role of contact resistance in graphene field-effect devices
• Hybrid Graphene/Silicon Schottky photodiode with intrinsic gating effect
• Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors
• Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate
• Graphene-Silicon Schottky diodes for photodetection
• Environmental effects on the electrical characteristics of back-gated WSe2 field effect transistors
• Electron irradiation of metal contacts in monolayer MoS${}_2$ Field-Effect Transistors
• Transport and field emission properties of buckypapers obtained from aligned carbon nanotubes
• Low-energy electron-irradiation effect on transport properties of graphene field effect transistor
• Isotropic conduction and negative photoconduction in ultrathin PtSe${}_2$ films
• Dependable contact related parameter extraction in graphene-metal junctions
• GFET Asymmetric Transfer Response Analysis through Access Region Resistances
• Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods