Mechanism for puddle formation in graphene

Abstract

When graphene is close to charge neutrality, its energy landscape is highly inhomogeneous, forming a sea of electron-like and hole-like puddles, which determine the properties of graphene at low carrier density. However, the details of the puddle formation have remained elusive. We demonstrate numerically that in sharp contrast to monolayer graphene, the normalized autocorrelation function for the puddle landscape in bilayer graphene depends only on the distance between the graphene and the source of the long-ranged impurity potential. By comparing with available experimental data, we find quantitative evidence for the implied differences in scanning tunneling microscopy measurements of electron and hole puddles for monolayer and bilayer graphene in nominally the same disorder potential.

7 pages, 6 figures

References in corpus (14)

• The electronic properties of graphene
• Boron nitride substrates for high-quality graphene electronics
• Chiral tunneling and the Klein paradox in graphene
• Dielectric function, screening, and plasmons in 2D graphene
• STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
• A self-consistent theory for graphene transport
• Measurement of Scattering Rate and Minimum Conductivity in Graphene
• Ground-state of graphene in the presence of random charged impurities
• Boltzmann transport and residual conductivity in bilayer graphene
• Evolution of Microscopic Localization in Graphene in a Magnetic Field from Scattering Resonances to Quantum Dots
• Microscopic Polarization in Bilayer Graphene
• Dynamical screening in bilayer graphene
• Imaging charge density fluctuations in graphene using Coulomb blockade spectroscopy
• Semiclassical Boltzmann transport theory for graphene multilayers

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• Spin Dynamics and Relaxation in Graphene Dictated by Electron-hole Puddles
• Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics
• Theory of Interfacial Plasmon-Phonon Scattering in Supported Graphene
• Charge Puddles in Graphene Near the Dirac Point
• Interaction driven metal-insulator transition in strained graphene
• 2D transport and screening in topological insulator surface states
• Dielectric Screening by 2D Substrates
• Spatial Charge Inhomogeneity and Defect States in Topological Dirac Semimetal Thin Films
• The compressibility of graphene
• Spin Dynamics in Bilayer Graphene : Role of Electron-Hole Puddles and the Dyakonov-Perel Mechanism
• Spin relaxation in disordered graphene: Interplay between puddles and defect-induced magnetism
• Minimal conductivity and signatures of quantum criticality in ballistic graphene bilayer
• STM/S study of electronic inhomogeneity evolution with gate voltage in graphene: role of screening and charge-state of interface defects