Spin relaxation in disordered graphene: Interplay between puddles and defect-induced magnetism
arXiv:1708.03712 · doi:10.1016/j.jpcs.2017.10.022
Abstract
We study the spin relaxation in graphene due to magnetic moments induced by defects. We propose and employ in our studies a microscopic model that describes magnetic impurity scattering processes mediated by charge puddles. This model incorporates the spin texture related to the defect-induced state. We calibrate our model parameters using experimentally-inferred values. The results we obtain for the spin relaxation times are in very good agreement with experimental findings. Our study leads to a comprehensive explanation for the short spin relaxation times reported in the experimental literature. We also propose a new interpretation for the puzzling experimental observation of enhanced spin relaxation times in hydrogenated graphene samples in terms of a combined effect due to disorder configurations that lead to an increased coupling to the magnetic moments and the tunability of the defect-induced -like magnetism in graphene.
12 pages, 9 figures
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- Heterostructures of graphene and hBN: electronic, spin-orbit, and spin relaxation properties from first principles
- Graphene on two-dimensional hexagonal BN, AlN, and GaN: Electronic, spin-orbit, and spin relaxation properties
- Disorder effects of vacancies on the electronic transport properties of realistic topological insulators nanoribbons: the case of bismuthene
- Breakdown of the Hebel-Slichter effect in superconducting graphene due to the emergence of Yu-Shiba-Rusinov states at magnetic resonant scatterers