Preferential antiferromagnetic coupling of vacancies in graphene on SiO_2: Electron spin resonance and scanning tunneling spectroscopy
arXiv:1407.6280 · doi:10.1103/PhysRevB.90.125449
Abstract
Monolayer graphene grown by chemical vapor deposition and transferred to SiO_2 is used to introduce vacancies by Ar^+ ion bombardment at a kinetic energy of 50 eV. The density of defects visible in scanning tunneling microscopy (STM) is considerably lower than the ion fluence implying that most of the defects are single vacancies. The vacancies are characterized by scanning tunneling spectroscopy (STS) on graphene and HOPG exhibiting a peak close to the Fermi level. The peak persists after air exposure up to 180 min, albeit getting broader. After air exposure for less than 60 min, electron spin resonance (ESR) at 9.6 GHz is performed. For an ion flux of 10/nm^2, we find a signal corresponding to a g-factor of 2.001-2.003 and a spin density of 1-2 spins/nm^2. The ESR signal consists of a mixture of a Gaussian and a Lorentzian of equal weight exhibiting a width down to 0.17 mT, which, however, depends on details of the sample preparation. The g-factor anisotropy is about 0.02%. Temperature dependent measurements reveal antiferromagnetic correlations with a Curie-Weiss temperature of -10 K. Albeit the electrical conductivity of graphene is significantly reduced by ion bombardment, the spin resonance induced change in conductivity is below 10^{-5}.
arXiv comment10 pages, 5 figures, discussion on STM images in the literature of defects in graphene added
References in corpus (37)
- Half-Metallic Graphene Nanoribbons
- Magnetism in Graphene Induced by Single-Atom Defects
- Atomic Structure of Graphene on SiO2
- Emergence of magnetism in graphene materials and nanostructures
- The missing atom as a source of carbon magnetism
- Spin-half paramagnetism in graphene induced by point defects
- Induced Magnetic Ordering by Proton Irradiation in Graphite
- Defect scattering in graphene
- Room-temperature ferromagnetism in graphite driven by 2D networks of point defects
- Disorder Induced Localized States in Graphene
- High-Resolution Scanning Tunneling Microscopy Imaging of Mesoscopic Graphene Sheets on an Insulating Surface
- Modeling disorder in graphene
- Ferromagnetism in Oriented Graphite Samples
- Intrinsic and extrinsic corrugation of monolayer graphene deposited on SiO2
- -Electron Ferromagnetism in Metal Free Carbon Probed by Soft X-Ray Dichroism
- Dual origin of defect magnetism in graphene and its reversible switching by molecular doping
- Tuning the electronic structure of graphene by ion irradiation
- Imaging the interface of epitaxial graphene with silicon carbide via scanning tunneling microscopy
- Electronic and structural characterization of divacancies in irradiated graphene
- Grain Boundary Loops in Graphene
- Transport properties of 2D graphene containing structural defects
- A Defective Graphene Phase Predicted to be a Room Temperature Ferromagnetic Semiconductor
- High-fidelity conformation of graphene to SiO2 topographic features
- Experimental Evidence for Two-Dimensional Magnetic Order in Proton Bombarded Graphite
- Magnetic moments in the presence of topological defects in graphene
- The role of hydrogen in room-temperature ferromagnetism at graphite surfaces
- Defect-Induced Magnetism in Solids
- Ferromagnetism in graphene nanoribbons: split versus oxidative unzipped ribbons
- Observation of Resistively Detected Hole Spin Resonance and Zero-field Pseudo-spin Splitting in Epitaxial Graphene
- Irradiation Enhanced paramagnetism on graphene nanoflakes
- Non-invasive transmission electron microscopy of vacancy defects in graphene produced by ion irradiation
- Atomic and electronic structure of monolayer graphene on 6H-SiC(000-1)(3 x 3) : a scanning tunneling microscopy study
- Finite temperature ordering of dilute graphene antiferromagnets
- Paramagnetic centers in graphene nanoribbons prepared from longitudinal unzipping of carbon nanotubes
- Graphing and Grafting Graphene: Classifying Finite Topological Defects
- Testing the Elliott-Yafet spin-relaxation mechanism in KC8; a model system of biased graphene
- High temperature ferromagnetism of Li-doped vanadium oxide nanotubes
Cited by in corpus (11)
- Vacancy in graphene: insight on magnetic properties from theoretical modeling
- Vacancy in graphene: insight on magnetic properties from theoretical modeling
- Magnetism and interaction-induced gap opening in graphene with vacancies or hydrogen adatoms: Quantum Monte Carlo study
- Probing Electron Spin Resonance in Monolayer Graphene
- Observation of competing, correlated ground states in the flat band of rhombohedral graphite
- Coulomb charging energy of vacancy-induced states in graphene
- Evidence for local spots of viscous electron flow in graphene at moderate mobility
- Transport signatures of Kondo physics and quantum criticality in graphene with magnetic impurities
- Spin relaxation in disordered graphene: Interplay between puddles and defect-induced magnetism
- Dynamic RKKY interaction between magnetic moments in graphene nanoribbons
- Apparent rippling with honeycomb symmetry and tunable periodicity observed by scanning tunneling microscopy on suspended graphene