Probing Electron Spin Resonance in Monolayer Graphene
arXiv:1611.08782 · doi:10.1103/PhysRevLett.119.066802
Abstract
The precise value of the -factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO2 substrate by resistively detected electron spin resonance (ESR). Surprisingly, the magnetic moment and corresponding g-factor of 1.952+/-0.002 is insensitive to charge carrier type, concentration, and mobility.
5 pages, 3 figures