Particle-hole symmetry protects spin-valley blockade in graphene quantum dots
arXiv:2303.10201 · doi:10.1038/s41586-023-05953-5
Abstract
Particle-hole symmetry plays an important role for the characterization of topological phases in solid-state systems. It is found, for example, in free-fermion systems at half filling, and it is closely related to the notion of antiparticles in relativistic field theories. In the low energy limit, graphene is a prime example of a gapless particle-hole symmetric system described by an effective Dirac equation, where topological phases can be understood by studying ways to open a gap by preserving (or breaking) symmetries. An important example is the intrinsic Kane-Mele spin-orbit gap of graphene, which leads to a lifting of the spin-valley degeneracy and renders graphene a topological insulator in a quantum spin Hall phase, while preserving particle-hole symmetry. Here, we show that bilayer graphene allows realizing electron-hole double quantum-dots that exhibit nearly perfect particle-hole symmetry, where transport occurs via the creation and annihilation of single electron-hole pairs with opposite quantum numbers. Moreover, we show that this particle-hole symmetry results in a protected single-particle spin-valley blockade. The latter will allow robust spin-to-charge conversion and valley-to-charge conversion, which is essential for the operation of spin and valley qubits.
References in corpus (17)
- The electronic properties of graphene
- Driven coherent oscillations of a single electron spin in a quantum dot
- The electronic properties of bilayer graphene
- Spin qubits in graphene quantum dots
- Universal control of a six-qubit quantum processor in silicon
- Realization of a minimal Kitaev chain in coupled quantum dots
- Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect
- Parity qubits and poor man's Majorana bound states in double quantum dots
- Proximity effects in bilayer graphene on monolayer WSe: Field-effect spin-valley locking, spin-orbit valve, and spin transistor
- Singlet and triplet Cooper pair splitting in hybrid superconducting nanowires
- Cooper Pair Splitting by means of Graphene Quantum Dots
- Excited states in bilayer graphene quantum dots
- Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
- Spin Cross-Correlation Experiments in an Electron Entangler
- Absence of hyperfine effects in C-graphene spin valve devices
- Pulsed-gate spectroscopy of single-electron spin states in bilayer graphene quantum dots
- Dispersive sensing of charge states in a bilayer graphene quantum dot
Cited by in corpus (23)
- Recent Advances in Graphene-Based Humidity Sensors with the Focus of Structural Design: A Review
- Spin-Valley Protected Kramers Pair in Bilayer Graphene
- Ultra-steep slope cryogenic FETs based on bilayer graphene
- Materials for Quantum Technologies: a Roadmap for Spin and Topology
- Pauli blockade catalogue and three- and four-particle Kondo effect in bilayer graphene quantum dots
- Extended Hubbard model describing small multi-dot arrays in bilayer graphene
- Impact of competing energy scales on the shell-filling sequence in elliptic bilayer graphene quantum dots
- Switching spin filling sequence in a bilayer graphene quantum dot through trigonal warping
- Tunable p-n junction barriers in few-electron bilayer graphene quantum dots
- Electric-field independent spin-orbit coupling gap in hBN-encapsulated bilayer graphene
- Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
- Supercell Wannier functions and a faithful low-energy model for Bernal bilayer graphene
- Electrically-tunable graphene nanomechanical resonators
- Electrically Tunable Fine Structure of Negatively Charged Excitons in Gated Bilayer Graphene Quantum Dots
- Phonon-limited valley life times in single-particle bilayer graphene quantum dots
- Tuning confined states and valley g-factors by quantum dot design in bilayer graphene
- Electric field tunable spin-orbit gap in a bilayer graphene/WSe quantum dot
- Ultra-Fast All-Electrical Universal Nano-Qubits
- Gate-defined single-electron transistors in twisted bilayer graphene
- Electronic and Spin-Orbit Properties of hBN Encapsulated Bilayer Graphene
- The role of antisymmetric orbitals and electron-electron interactions on the two-particle spin and valley blockade in graphene double quantum dots
- Radio-frequency charge detection on graphene electron-hole double quantum dots
- Electrostatic tuning of bilayer graphene edge modes