Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
arXiv:2312.14629 · doi:10.1021/acs.nanolett.4c01791
Abstract
We implement circuit quantum electrodynamics (cQED) with quantum dots in bilayer graphene, a maturing material platform for semiconductor qubits that can host long-lived spin and valley states. The presented device combines a high-impedance () superconducting microwave resonator with a double quantum dot electrostatically defined in a graphene-based van der Waals heterostructure. Electric dipole coupling between the subsystems allows the resonator to sense the electric susceptibility of the double quantum dot from which we reconstruct its charge stability diagram. We achieve sensitive and fast detection with a signal-to-noise ratio of 3.5 within 1 integration time. The charge-photon interaction is quantified in the dispersive and resonant regimes by comparing the coupling-induced change in the resonator response to input-output theory, yielding a maximal coupling strength of . Our results introduce cQED as a probe for quantum dots in van der Waals materials and indicate a path toward coherent charge-photon coupling with bilayer graphene quantum dots.
9 pages, 4 figures
References in corpus (28)
- Spin qubits in graphene quantum dots
- Computing with spin qubits at the surface code error threshold
- A four-qubit germanium quantum processor
- Two-qubit silicon quantum processor with operation fidelity exceeding 99%
- Strong Coupling of a Single Electron in Silicon to a Microwave Photon
- Efficient and robust analysis of complex scattering data under noise in microwave resonators
- Strong Coupling Cavity QED with Gate-Defined Double Quantum Dots Enabled by a High Impedance Resonator
- Rapid high-fidelity gate-based spin read-out in silicon
- Coherent spin-spin coupling mediated by virtual microwave photons
- Strong coupling between a photon and a hole spin in silicon
- Circuit Quantum Electrodynamics Architecture for Gate-Defined Quantum Dots in Silicon
- Hexagonal Boron Nitride (hBN) as a Low-loss Dielectric for Superconducting Quantum Circuits and Qubits
- Long-lived valley states in bilayer graphene quantum dots
- Spin relaxation in a single-electron graphene quantum dot
- Dispersive readout of valley splittings in cavity-coupled silicon quantum dots
- Particle-hole symmetry protects spin-valley blockade in graphene quantum dots
- Single-shot readout in graphene quantum dots
- Pauli Blockade of Tunable Two-Electron Spin and Valley States in Graphene Quantum Dots
- Strong coupling between a microwave photon and a singlet-triplet qubit
- Miniaturizing transmon qubits using van der Waals materials
- On-chip microwave filters for high-impedance resonators with gate-defined quantum dots
- Spin digitizer for high-fidelity readout of a cavity-coupled silicon triple quantum dot
- Counting Statistics of Single Electron Transport in Bilayer Graphene Quantum Dots
- Dispersive sensing of charge states in a bilayer graphene quantum dot
- Coherent Charge Oscillations in a Bilayer Graphene Double Quantum Dot
- Radio-frequency reflectometry in bilayer graphene devices utilizing micro graphite back-gates
- Pauli blockade catalogue and three- and four-particle Kondo effect in bilayer graphene quantum dots
- Performance of high impedance resonators in dirty dielectric environments