83 citations · 268 across the 14 of their papers we have counts for
15 papers
Refined DFT recipe and renormalisation of band-edge parameters for electrons in monolayer MoS informed by the measured spin-orbit splitting
Igor Rozhansky, Michele Masseroni, Ricardo Pisoni +6
Conduction band-edge spin-orbit splitting (SOS) in monolayer transition metal dichalcogenides determines a competition between bright and dark excitons and sets conditions for spin…
Time-resolved Charge Detection in Transition Metal Dichalcogenide Quantum Dots
Markus Niese, Michele Masseroni, Clara Scherm +10
We investigate electronic transport through gate-defined quantum dots in molybdenum disulfide MoS using an integrated charge detector. We observe a crossover from two weakly co…
Spin-valley 0.7 anomaly in bilayer graphene/WSe quantum point contacts
Jonas D. Gerber, Efe Ersoy, Michele Masseroni +10
We report a well-resolved 0.7 conductance anomaly at in bilayer graphene/WSe quantum point contacts. Proximity-enhanced spin-orbit coupling splits the f…
Tunable spin-orbit splitting in bilayer graphene/WSe quantum devices
Jonas D. Gerber, Efe Ersoy, Michele Masseroni +14
Bilayer graphene (BLG)-based quantum devices represent a promising platform for emerging technologies, such as quantum computing and spintronics. However, their intrinsically weak…
Gate-tunable band-edge in few-layer MoS
Michele Masseroni, Isaac Soltero, James G. Hugh +9
Transition metal dichalcogenides (TMDs) have garnered significant research interest due to the variation in band-edge locations within the hexagonal Brillouin zone between single-l…
Entropy spectroscopy of a bilayer graphene quantum dot
Christoph Adam, Hadrien Duprez, Natalie Lehmann +13
We measure the entropy change of charge transitions in an electrostatically defined quantum dot in bilayer graphene. Entropy provides insights into the equilibrium thermodynamic pr…
Spin-orbit proximity in MoS/bilayer graphene heterostructures
M. Masseroni, M. Gull, A. Panigrahi +11
Van der Waals heterostructures provide a versatile platform for tailoring electronic properties through the integration of two-dimensional materials. Among these combinations, the…
Spin-Valley Protected Kramers Pair in Bilayer Graphene
Artem O. Denisov, Veronika Reckova, Solenn Cances +11
The intrinsic valley degree of freedom makes bilayer graphene (BLG) a unique platform for semiconductor qubits. The single-carrier quantum dot (QD) ground state exhibits a two-fold…
Dipole coupling of a bilayer graphene quantum dot to a high-impedance microwave resonator
Max J. Ruckriegel, Lisa M. Gächter, David Kealhofer +12
We implement circuit quantum electrodynamics (cQED) with quantum dots in bilayer graphene, a maturing material platform for semiconductor qubits that can host long-lived spin and v…
Spin-valley locked excited states spectroscopy in a one-particle bilayer graphene quantum dot
Hadrien Duprez, Solenn Cances, Andraz Omahen +12
Current semiconductor qubits rely either on the spin or on the charge degree of freedom to encode quantum information. By contrast, in bilayer graphene the valley degree of freedom…
Evidence of the Coulomb gap in the density of states of MoS
Michele Masseroni, Tingyu Qu, Takashi Taniguchi +3
is an emergent van der Waals material that shows promising prospects in semiconductor industry and optoelectronic applications. However, its electronic properties…
Electron transport in dual-gated three-layer MoS
M. Masseroni, T. Davatz, R. Pisoni +7
The low-energy band structure of few-layer MoS is relevant for a large variety of experiments ranging from optics to electronic transport. Its characterization remains challeng…
Correlated electron-hole State in Twisted Double Bilayer Graphene
Peter Rickhaus, Folkert de Vries, Jihang Zhu +9
When twisted to angles near 1°, graphene multilayers provide a new window on electron correlation physics by hosting gate-tuneable strongly-correlated states, including insulators,…
Gap Opening in Twisted Double Bilayer Graphene by Crystal fields
Peter Rickhaus, Giulia Zheng, Jose L. Lado +12
Crystal fields occur due to a potential difference between chemically different atomic species. In Van-der-Waals heterostructures such fields are naturally present perpendicular to…
Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer
Matija Karalic, Antonio Štrkalj, Michele Masseroni +7
Electron optics in the solid state promises new functionality in electronics through the possibility of realizing micrometer-sized interferometers, lenses, collimators and beam spl…