Tunable spin-orbit splitting in bilayer graphene/WSe quantum devices
arXiv:2504.05864 · doi:10.1021/acs.nanolett.5c02309
Abstract
Bilayer graphene (BLG)-based quantum devices represent a promising platform for emerging technologies, such as quantum computing and spintronics. However, their intrinsically weak spin-orbit coupling (SOC) complicates spin and valley manipulation. Integrating BLG with transition metal dichalcogenides (TMDs) enhances the SOC via proximity effects. While this enhancement has been demonstrated in 2D-layered structures, 1D and 0D nanostructures in BLG/TMD remain unrealized, with open questions regarding SOC strength and tunability. Here, we investigate quantum point contacts and quantum dots in two BLG/WSe heterostructures with different stacking orders. Across multiple devices, we reproducibly demonstrate spin-orbit splitting up to 1.5 meV - more than 1 order of magnitude higher than in pristine BLG. Furthermore, we show that the induced SOC can be tuned in situ from its maximum value to near-complete suppression via the perpendicular electric field. This enhancement and in situ tunability establish the SOC as a control mechanism for dynamic spin and valley manipulation.
References in corpus (41)
- Quantum Spin Hall Effect in Graphene
- Valley filter and valley valve in graphene
- Gate-induced insulating state in bilayer graphene devices
- Spin qubits in graphene quantum dots
- Spin-Orbit Proximity Effect in Graphene
- Strong interface-induced spin-orbit coupling in graphene on WS2
- Gate-tunable Topological Valley Transport in Bilayer Graphene
- Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides
- Trivial and inverted Dirac bands, and emergence of quantum spin Hall states in graphene on transition-metal dichalcogenides
- Fast two-qubit logic with holes in germanium
- Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect
- Origin and magnitude of 'designer' spin-orbit interaction in graphene on semiconducting transition metal dichalcogenides
- Tunable spin-orbit coupling and symmetry-protected edge states in graphene/WS
- Proximity effects in bilayer graphene on monolayer WSe: Field-effect spin-valley locking, spin-orbit valve, and spin transistor
- Large spin relaxation anisotropy and valley-Zeeman spin-orbit coupling in WSe2/Gr/hBN heterostructures
- Intrinsic spin-orbit coupling gap and the evidence of a topological state in graphene
- Twist-angle dependence of the proximity spin-orbit coupling in graphene on transition-metal dichalcogenides
- Theory of spin-orbit coupling in bilayer graphene
- Strong Spin-Orbit Interaction Induced in Graphene by Monolayer WS
- Induced spin-orbit coupling in twisted graphene-TMDC heterobilayers: twistronics meets spintronics
- Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots
- Electrostatically induced quantum point contact in bilayer graphene
- Magnetotransport in heterostructures of transition metal dichalcogenides and graphene
- Gate-defined electron-hole double dots in bilayer graphene
- Long-lived valley states in bilayer graphene quantum dots
- Tunable Valley Splitting due to Topological Orbital Magnetic Moment in Bilayer Graphene Quantum Point Contacts
- Spin-valley coupling in single-electron bilayer graphene quantum dots
- Observation of the spin-orbit gap in bilayer graphene by one-dimensional ballistic transport
- Topologically non-trivial valley states in bilayer graphene quantum point contacts
- Spin relaxation in a single-electron graphene quantum dot
- Influence of minivalleys and Berry curvature on electrostatically induced quantum wires in gapped bilayer graphene
- Single-shot readout in graphene quantum dots
- Twist- and gate-tunable proximity spin-orbit coupling, spin relaxation anisotropy, and charge-to-spin conversion in heterostructures of graphene and transition-metal dichalcogenides
- Nematicity and Orbital Depairing in Superconducting Bernal Bilayer Graphene with Strong Spin Orbit Coupling
- Valley subband splitting in bilayer graphene quantum point contact
- Ballistic transport spectroscopy of spin-orbit-coupled bands in monolayer graphene on WSe
- Spin-orbit proximity in MoS/bilayer graphene heterostructures
- Experimental observation of spin-split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures
- Spin-Valley Protected Kramers Pair in Bilayer Graphene
- Screening in gated bilayer graphene via variational calculus
- Spin-valley locked excited states spectroscopy in a one-particle bilayer graphene quantum dot