Electron-Hole Interference in an Inverted-Band Semiconductor Bilayer
arXiv:1911.00424 · doi:10.1103/PhysRevX.10.031007
Abstract
Electron optics in the solid state promises new functionality in electronics through the possibility of realizing micrometer-sized interferometers, lenses, collimators and beam splitters that manipulate electrons instead of light. Until now, however, such functionality has been demonstrated exclusively in one-dimensional devices, such as in nanotubes, and in graphene-based devices operating with p-n junctions. In this work, we describe a novel mechanism for realizing electron optics in two dimensions. By studying a two-dimensional Fabry-Pérot interferometer based on a resonant cavity formed in an InAs/GaSb double quantum well using p-n junctions, we establish that electron-hole hybridization in band-inverted systems can facilitate coherent interference. With this discovery, we expand the field of electron optics to encompass materials that exhibit band inversion and hybridization, with the promise to surpass the performance of current state-of-the-art devices.
arXiv comment7 pages, 3 figures + supplemental material (24 pages, 14 figures), comments are welcome
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- Tomasch Oscillations as Above-Gap Signature of Topological Superconductivity
- Conductance oscillation in surface junctions of Weyl semimetals
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- Electronic analogue of Fourier optics with mass-less Dirac fermions scattered by quantum dot lattice
- Helicity modulus in the bilayer XY model by worm algorithm
- Fabry-Pérot cavities and quantum dot formation at gate-defined interfaces in twisted double bilayer graphene