Veselago Lens for Electrons: Focusing and Caustics in Graphene p-n Junctions

Abstract

The focusing of electric current by a single \textit{p-n} junction in graphene is predicted. We show that precise focusing can be achieved by fine-tuning the densities of carriers on the n- and p-sides of the junction to equal values, whereas the current distribution in junctions with different densities resembles caustics in optics. This finding can be utilized in the engineering of electronic lenses and focused beam-splitters using gate-controlled \textit{n-p-n} junctions in graphene-based transistors.

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References in corpus (6)

• Electric Field Effect in Atomically Thin Carbon Films
• Chiral tunneling and the Klein paradox in graphene
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Selective transmission of Dirac electrons and ballistic magnetoresistance of \textit{n-p} junctions in graphene
• Friedel oscillations, impurity scattering and temperature dependence of resistivity in graphene
• Local spectroscopy and atomic imaging of tunneling current, forces and dissipation on graphite

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