Goos-Hänchen-like shifts for Dirac fermions in monolayer graphene barrier

Abstract

We investigate the Goos-Hänchen-like shifts for Dirac fermions in transmission through a monolayer graphene barrier. The lateral shifts, as the functions of the barrier's width and the incidence angle, can be negative and positive in Klein tunneling and classical motion, respectively. Due to their relations to the transmission gap, the lateral shifts can be enhanced by the transmission resonances when the incidence angle is less than the critical angle for total reflection, while their magnitudes become only the order of Fermi wavelength when the incidence angle is larger than the critical angle. These tunable beam shifts can also be modulated by the height of potential barrier and the induced gap, which gives rise to the applications in graphene-based devices.

5 pages, 5 figures

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• Electron beam splitting at topological insulator surface states and a proposal for electronic Goos-Hanchen shift measurement
• Goos-Hänchen shifts in spin-orbit-coupled cold atoms
• Spin- and valley-dependent Goos-Hanchen effect in silicene and gapped graphene structures
• Gate-controlled valley transport and Goos-Hänchen effect in monolayer WS${}_2$
• Strain effect on Goos-Hänchen shifts and group delay time in gapped graphene barrier
• Effect of strain on tunneling time in graphene magnetic barrier
• Group delay time of fermions in graphene through tilted potential barrier
• Controlling Goos-Hänchen shifts in phosphorene via barrier and well
• Magnetic control of Goos-Hänchen shifts and group delay time in monolayer WSe${}_2$