Giant Goos-Hänchen Shift in Graphene Double-barrier Structures
arXiv:1208.2395 · doi:10.1063/1.4730440
Abstract
We report giant Goos-Hänchen shifts [Goos and Hänchen, Ann. Phys. 436, 333 (1947)] for electron beams tunneling through graphene double barrier structures. We find that inside the transmission gap for the single barrier, the shift displays sharp peaks with magnitudes up to the order of electron beam width and rather small full-widths-at-half-maximum, which may be utilized to design valley and spin beam splitters with wide tunability and high energy resolution. We attribute the giant shifts to quasibound states in the structures. Moreover, an induced energy gap in the dispersion can increase the tunability and resolution of the splitters.
5 pages including 5 figures
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- Goos-Hanchen like Shifts in Graphene Double Barriers
- Electron beam splitting at topological insulator surface states and a proposal for electronic Goos-Hanchen shift measurement
- Band-offset-induced lateral shift of valley electrons in ferromagnetic MoS/WS planar heterojunctions
- Goos-Hänchen Shifts in AA-Stacked Bilayer Graphene Superlattices
- Spin- and valley-dependent Goos-Hanchen effect in silicene and gapped graphene structures
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- Controlling Goos-Hänchen shifts in phosphorene via barrier and well
- Transmission and Goos-Hänchen like Shifts through a Graphene Double Barrier in an Inhomogeneous Magnetic Field