activity
20122021
most citedGiant Goos-Hänchen Shift in Graphene Double-barrier Structures

63 citations · 222 across the 11 of their papers we have counts for

collaborators

11 papers

physics.chem-ph2021★ 1 cited

Emerging Oscillating Reactions at the Insulator/Semiconductor Solid/Solid Interface via Proton Implantation

Dechao Meng, Guanghui Zhang, Ming Li +15

Most oscillating reactions (ORs) happen in solutions. Few existing solid-based ORs either happen on solid/gas (e.g., oxidation or corrosion) or solid/liquid interfaces, or at the a…

physics.app-ph2020★ 15 cited

Origin of Irradiation Synergistic Effects in Silicon Bipolar Transistors: a Review

Yu Song, Su-Huai Wei

The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement…

physics.app-ph2020★ 24 cited

Universal Analytic Model of Irradiation Defect Dynamics in Silica-Silicon Structures

Yu Song, Guanghui Zhang, Xue-Fen Cai +6

Irradiation damage is a key physics issue for semiconductor devices under extreme environments. For decades, the ionization-irradiation-induced damage in transistors with silica-si…

physics.app-ph2019★ 21 cited

Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors

Yu Song, Ying Zhang, Yang Liu +6

The synergistic effects of neutron and gamma ray radiated PNP transistors are systematically investigated as functions of the neutron fluence, gamma ray dose, and dose rate. We fin…

physics.space-ph2019★ 1 cited

Linear Dependence of Post-irradiation Input Bias Currents on Pre-irradiation Values in Silicon Bipolar Microcircuits

Yu Song, Jie Zhao, Shun Li +7

We find in experiments a linear dependence of ionization irradiation-induced degradations on pre-irradiation values of the input bias current in bipolar devices with simple input s…

cond-mat.mes-hall2017★ 16 cited

Spin-selectable, region-tunable negative differential resistance in graphene double ferromagnetic barriers

Yu Song, Yang Liu, Xiaolong Feng +2

We propose a graphene device that can generate spin-dependent negative differential resistance (NDR). The device is composed of a sufficiently wide and short graphene and two gated…