Generation of a fully valley-polarized current in bulk graphene

Abstract

The generation of a fully valley-polarized current (FVPC) in bulk graphene is a fundamental goal in valleytronics. To this end, we investigate valley-dependent transport through a strained graphene modulated by a finite magnetic superlattice. It is found that this device allows a coexistence of insulating transmission gap of one valley and metallic resonant band of the other. Accordingly, a substantial bulk FVPC appears in a wide range of edge orientation and temperature, which can be effectively tuned by structural parameters. A valley-resolved Hall configuration is designed to measure the valley polarization degree of the filtered current.

Derivation details of the transfer matrix for a finite superlattice (Eq. (4)) are added

References in corpus (13)

• The electronic properties of graphene
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
• Valley filter and valley valve in graphene
• Andreev reflection and Klein tunneling in graphene
• All-graphene integrated circuits via strain engineering
• Quantum-limited shot noise in graphene
• Graphene valley filter using a line defect
• Controllable valley and spin transports in ferromagnetic silicene junctions
• Valley filter in strain engineered graphene
• Wave packet dynamics and valley filter in strained graphene
• Resonant valley filtering of massive Dirac electrons
• Scattering by linear defects in graphene: a continuum approach

Cited by in corpus (6)

• Floquet-Engineered Valleytronics in Dirac Systems
• Valley-Polarized Quantum Transport Generated by Gauge Fields in Graphene
• Spin filter and spin valve in ferromagnetic graphene
• Valley polarization braiding in strained graphene
• Enhanced asymmetric valley scattering by scalar fields in non-uniform out-of-plane deformations in graphene
• High-purity valley-polarized currents induced by bichromatic optical fields in two-dimensional materials