Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
arXiv:0710.5304 · doi:10.1103/PhysRevLett.100.016602
Abstract
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements have shown that mobilities significantly higher than 200,000 cm2/Vs are achievable, if extrinsic disorder is eliminated. A sharp (threshold-like) increase in resistivity observed above approximately 200K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intra-ripple flexural phonons.
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- Exact eigenstate analysis of finite-frequency conductivity in graphene
- Weak Localisation in Clean and Highly Disordered Graphene
- Strain-enhanced edge ferromagnetism and bipolar magnetic semiconducting behavior in Janus graphene nanoribbons
- Large negative transconductance in multilayer graphene: The role of intersubband scattering
- Alignment of graphene nanoribbons by an electric-field
- Graphene-based Bolometers
- Magnetic quantization in multilayer graphenes
- Klein tunneling through triple barrier in AB bilayer graphene
- Theoretical limits of electron and hole doping in single layer graphene from DFT calculations
- Optical conductivity of a Dirac-Fermi liquid
- Tuning electronic properties and Schottky contact in graphene-based van der Waals heterostructures by electric gating and interlayer coupling
- High Responsivity Gate Tunable UV-Visible Broadband Phototransistor Based on Graphene-WS2 Mixed Dimensional (2D-0D) Heterostructure
- Hydrogen-mediated CVD epitaxy of Graphene on SiC: growth mechanism and atomic configuration
- Exchange-Correlation Functionals in 2D Materials: Applications, Challenges, and Limitations
- Orbital Diamagnetism of Weak-doped Bilayer Graphene in Magnetic Field
- Device Chemistry of Graphene Transistors
- Multiphoton cross sections of conductive electrons stimulated bremsstrahlung in doped bilayer graphene
- Decoration of graphene nanoribbons by transition-metal elements
- Na-intercalation compounds and Na-ion batteries
- Height correlation of rippled graphene and Lundeberg-Folk formula for magnetoresistance
- Electron-hole asymmetry in electrical conductivity of low-fluorinated graphene: Numerical study
- Microscopic nonlinear quantum theory of absorption of coherent electromagnetic radiation in doped bilayer graphene