Quantum transport thermometry for electrons in graphene

Abstract

We propose a method of measuring the electron temperature $T_e$ in mesoscopic conductors and demonstrate experimentally its applicability to micron-size graphene devices in the linear-response regime ($T_e\approx T$, the bath temperature). The method can be {especially useful} in case of overheating, $T_e>T$. It is based on analysis of the correlation function of mesoscopic conductance fluctuations. Although the fluctuation amplitude strongly depends on the details of electron scattering in graphene, we show that $T_e$ extracted from the correlation function is insensitive to these details.

4 pages, 4 figures; final version, as published

References in corpus (5)

• Electric Field Effect in Atomically Thin Carbon Films
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Weak localisation in graphene flakes
• Influence of trigonal warping on interference effects in bilayer graphene
• Mesoscopic conductance fluctuations in graphene samples

Cited by in corpus (2)

• Weak Localization and Transport Gap in Graphene Antidot Lattices
• Optical Measurement of the Phase-Breaking Length in Graphene