Influence of trigonal warping on interference effects in bilayer graphene

Abstract

Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In particular, the electronic Fermi line in each of its valleys has a strong p -> -p asymmetry due to a trigonal warping, which suppresses the weak localization effect. We show that weak localisation in bilayer graphene may be present only in devices with pronounced intervalley scattering, and we evaluate the corresponding magnetoresistance.

4 pages, 1 figure

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• Electric Field Effect in Atomically Thin Carbon Films
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• Weak localisation magnetoresistance and valley symmetry in graphene
• Strong suppression of weak (anti)localization in graphene
• Intervalley scattering, long-range disorder, and effective time reversal symmetry breaking in graphene
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Cited by in corpus (34)

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• Coulomb interaction in graphene: Relaxation rates and transport
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• Scattering of charge carriers by point defects in bilayer graphene
• Electronic transport in normal-conductor/graphene/normal-conductor junctions and conditions for insulating behavior at a finite charge-carrier density
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• Finite Conductivity Minimum in Bilayer Graphene without Charge Inhomogeneities
• Floquet Engineering of Nonequilibrium Valley-Polarized Quantum Anomalous Hall Effect with Tunable Chern Number
• Quantum transport thermometry for electrons in graphene
• Spin-valley relaxation and quantum transport regimes in two-dimensional transition metal dichalcogenides
• Phase Coherent Transport in Graphene Nanoribbons and Graphene Nanoribbon Arrays
• Enhanced Intervalley Scattering of Twisted Bilayer Graphene by Periodic AB Stacked Atoms
• Lattice-layer entanglement in Bernal-stacked bilayer graphene
• Electron delocalization in bilayer graphene induced by an electric field
• Electron Flow in Circular n-p Junctions of Bilayer Graphene
• Geometrical quench and dynamical quantum phase transition in the $\alpha -T_3$ lattice
• Unidirectional valley-contrasting photo-current in strained transition metal dichalcogenide monolayers
• Topological phase transition from trigonal warping in van der Waals multilayers
• Quasiparticle interference patterns in bilayer graphene with trigonal warping
• Weak localisation in bilayer graphene
• Anisotropic resistivity of the monolayer graphene in the trigonal warping and connected Fermi curve regimes
• Weak localization on moiré superlattice in twisted double bilayer graphene
• Ultrafast all-optical generation of pure spin and valley currents
• Weak Localization and Antilocalization in Twisted Bilayer Graphene
• Revealing the non-adiabatic and non-Abelian multiple-band effects via anisotropic valley Hall conduction in bilayer graphene
• Weak localization and universal conductance fluctuations in large area twisted bilayer graphene