Anisotropic resistivity of the monolayer graphene in the trigonal warping and connected Fermi curve regimes
arXiv:1409.0130 · doi:10.1016/j.physe.2014.12.010
Abstract
In the present study, the anisotropic resistivity of the monolayer graphene has been obtained in semiclassical regime beyond the Dirac point approximation. In particular, detailed investigations were made on the dependence of conductivity on the Fermi energy. At low energies, in the vicinity of the Dirac points, band energy of the monolayer graphene is isotropic at the Fermi level. Meanwhile, at the intermediate Fermi energies anisotropic effects such as trigonal warping is expected to be the origin of the anisotropic resistivity. However, besides the band anisotropy there also exists an other source of anisotropic resistivity which was introduced by scattering matrix. At high energies it was shown that the band anisotropy is less effective than the anisotropy generated by the scattering matrix. It was also shown that there exist two distinct regimes of anisotropic resistivity corresponding the trigonal warping and connected Fermi curve at intermediate and high energies respectively.
References in corpus (22)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Two Dimensional Atomic Crystals
- Half-Metallic Graphene Nanoribbons
- Graphene Nano-Ribbon Electronics
- Electronic Properties of Disordered Two-Dimensional Carbon
- Unconventional Integer Quantum Hall effect in graphene
- Quantum-limited shot noise in graphene
- Magnetic Correlations at Graphene Edges
- Electronic states and Landau levels in graphene stacks
- Zitterbewegung, chirality, and minimal conductivity in graphene
- Enhanced Half-Metallicity in Edge-Oxidized Zigzag Graphene Nanoribbons
- Electron transport in disordered graphene
- Effect of Disorder on Transport in Graphene
- Half-metallic graphene nanodots
- Edge States and the Quantized Hall Effect in Graphene
- Trigonal warping and Berry's phase N pi in ABC-stacked multilayer graphene
- Robust Transport Properties in Graphene
- Suppression of spin-polarization in graphene nanoribbon by edge defect and impurity
- Edge Effects in Finite Elongated Graphene Nanoribbons
- Influence of trigonal warping on interference effects in bilayer graphene
- Carbon nanoelectronics: unzipping tubes into graphene ribbons