Spin-valley relaxation and quantum transport regimes in two-dimensional transition metal dichalcogenides

Abstract

Quantum transport and spintronics regimes are studied in p- and n-doped atomic layers of hexagonal transition metal dichalcogenides (TMDCs), subject to the interplay between the valley structure and spin-orbit coupling. We find how spin relaxation of carriers depends on their areal density and show that it vanishes for holes near the band edge, leading to the density-independent spin diffusion length, and we develop a theory of weak localisation/antilocalisation, describing the crossovers between the orthogonal, double-unitary and symplectic regimes of quantum transport in TMDCs.

12 pages, 5 figures

References in corpus (12)

• High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Weak localisation magnetoresistance and valley symmetry in graphene
• Electrical Transport Properties of Single-Layer WS2
• Mono- and Bilayer WS2 Light-Emitting Transistors
• Intervalley scattering, long-range disorder, and effective time reversal symmetry breaking in graphene
• Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study
• Electronic properties of single-layer and multilayer transition metal dichalcogenides $M{X}_2$ ($M=$ Mo, W and $X=$ S, Se)
• Intervalley Scattering and Localization Behaviors of Spin-Valley Coupled Dirac Fermions
• Influence of trigonal warping on interference effects in bilayer graphene
• Quantum kinetic equation and universal conductance fluctuations in graphene
• Weak localization and conductance fluctuations in a quantum dot with parallel magnetic field and spin-orbit scattering

Cited by in corpus (10)

• k.p theory for two-dimensional transition metal dichalcogenide semiconductors
• Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction
• Three-particle Complexes in Two-Dimensional Semiconductors
• Valley relaxation of resident electrons and holes in a monolayer semiconductor: Dependence on carrier density and the role of substrate-induced disorder
• Electric-field-tunable valley Zeeman effect in bilayer graphene heterostructures: Realization of the spin-orbit valve effect
• Symmetry-forbidden intervalley scattering by atomic defects in monolayer transition-metal dichalcogenides
• Atomistic $T$-matrix theory of disordered 2D materials: Bound states, spectral properties, quasiparticle scattering, and transport
• Weak localization in boron nitride encapsulated bilayer MoS${}_2$
• A spincaloritronic battery
• Weak Localisation Driven by Pseudospin-Spin Entanglement