Weak localization in transition metal dichalcogenide monolayers and their heterostructures with graphene

Abstract

We calculate the interference correction to the conductivity of doped transition metal dichalcogenide (TMDC) monolayers. Because of the interplay between valley structure and intrinsic spin-orbit coupling (SOC), these materials exhibit a rich weak localization (WL) behavior that is qualitatively different from conventional metals or similar two-dimensional materials such as graphene. Our results can also be used to describe graphene/TMDC heterostructures, where the SOC is induced in the graphene sheet. We discuss new parameter regimes that go beyond existing theories, and can be used to interpret recent experiments in order to assess the strength of SOC and disorder. Furthermore, we show that an in-plane Zeeman field can be used to distinguish the contributions of different kinds of SOC to the WL magnetoconductance.

arXiv comment15 pages, 6 figures

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Cited by in corpus (14)

• Induced spin-orbit coupling in twisted graphene-TMDC heterobilayers: twistronics meets spintronics
• Spin-Orbit Interaction Induced in Graphene by Transition-Metal Dichalcogenides
• Counterintuitive gate dependence of weak antilocalization in bilayer graphene/WSe${}_2$ heterostructures
• Electric-field-tunable valley Zeeman effect in bilayer graphene heterostructures: Realization of the spin-orbit valve effect
• Experimental observation of spin-split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures
• Atomistic $T$-matrix theory of disordered 2D materials: Bound states, spectral properties, quasiparticle scattering, and transport
• Effect of proximity-induced spin-orbit coupling in graphene mesoscopic billiards
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• Kernel polynomial method to Anderson transition in disordered $\beta$-graphyne
• Tuning proximity-induced spin-orbit coupling in graphene/WSe${}_2$ heterostructures
• Interplay of Rashba and valley-Zeeman splittings in weak localization of spin-orbit coupled graphene