Counterintuitive gate dependence of weak antilocalization in bilayer graphene/WSe${}_2$ heterostructures

Abstract

Strong gate control of proximity-induced spin-orbit coupling was recently predicted in bilayer graphene/transition metal dichalcogenides (BLG/TMDC) heterostructures, as charge carriers can easily be shifted between the two graphene layers, and only one of them is in close contact to the TMDC. The presence of spin-orbit coupling can be probed by weak antilocalization (WAL) in low field magnetotransport measurements. When the spin-orbit splitting in such a heterostructure increases with the out of plane electric displacement field $\bar{D}$, one intuitively expects a concomitant increase of WAL visibility. Our experiments show that this is not the case. Instead, we observe a maximum of WAL visibility around $\bar{D}=0$. This counterintuitive behaviour originates in the intricate dependence of WAL in graphene on symmetric and antisymmetric spin lifetimes, caused by the valley-Zeeman and Rashba terms, respectively. Our observations are confirmed by calculating spin precession and spin lifetimes from an $8\times 8$ model Hamiltonian of BLG/TMDC.

arXiv commentAccepted by Phys Rev B

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• Ultra-Fast All-Electrical Universal Nano-Qubits
• Weak localization as probe of spin-orbit-induced spin-split bands in bilayer graphene proximity coupled to WSe${}_2$
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• Tuning proximity-induced spin-orbit coupling in graphene/WSe${}_2$ heterostructures
• Weak localization and antilocalization corrections to nonlinear transport: a semiclassical Boltzmann treatment